GB1158255A - High Speed Semiconductor Switch. - Google Patents

High Speed Semiconductor Switch.

Info

Publication number
GB1158255A
GB1158255A GB42322/66A GB4232266A GB1158255A GB 1158255 A GB1158255 A GB 1158255A GB 42322/66 A GB42322/66 A GB 42322/66A GB 4232266 A GB4232266 A GB 4232266A GB 1158255 A GB1158255 A GB 1158255A
Authority
GB
United Kingdom
Prior art keywords
cathode
gate
cathode region
alloying
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42322/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1158255A publication Critical patent/GB1158255A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB42322/66A 1965-10-23 1966-09-22 High Speed Semiconductor Switch. Expired GB1158255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US503943A US3403309A (en) 1965-10-23 1965-10-23 High-speed semiconductor switch

Publications (1)

Publication Number Publication Date
GB1158255A true GB1158255A (en) 1969-07-16

Family

ID=24004172

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42322/66A Expired GB1158255A (en) 1965-10-23 1966-09-22 High Speed Semiconductor Switch.

Country Status (3)

Country Link
US (1) US3403309A (https=)
BE (1) BE688753A (https=)
GB (1) GB1158255A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers
BE624012A (https=) * 1961-10-27
NL296392A (https=) * 1963-08-07
BR6462522D0 (pt) * 1963-10-28 1973-05-15 Rca Corp Dispositivos semicondutores e processo de fabrica-los

Also Published As

Publication number Publication date
BE688753A (https=) 1967-03-31
US3403309A (en) 1968-09-24

Similar Documents

Publication Publication Date Title
GB1365714A (en) Thyristor power switching circuits
GB1112301A (en) Controlled rectifier with improved turn-on and turn-off characteristics
JPS4820951B1 (https=)
GB1156997A (en) Improvements in and relating to Controllable Semi-Conductor Devices
GB1088775A (en) Semiconductor controlled rectifier
GB1060208A (en) Avalanche transistor
GB1196576A (en) High Current Gate Controlled Switches
GB1002725A (en) Semiconductor device
JP3432708B2 (ja) 半導体装置と半導体モジュール
GB983266A (en) Semiconductor switching devices
GB1110281A (en) Semiconductor junction device for generating optical radiation
GB1088637A (en) Four layer semiconductor switching devices having a shorted emitter
GB969592A (en) A semi-conductor device
GB1158255A (en) High Speed Semiconductor Switch.
US3796931A (en) P-n junction semiconductor device provided with an insulating layer having two stable resistance states
GB973722A (en) Improvements in or relating to semiconductor devices
GB1432676A (en) Encapsulated light activated semiconductor device
GB1177031A (en) Pressure Assembled Semiconductor Device using Massive Flexibly Mounted Terminals
GB967365A (en) Semiconductor devices
US3566210A (en) Semiconductor switching device having a shorted emitter
GB1094336A (en) Thyristors
US4097887A (en) Low resistance, durable gate contact pad for thyristors
US3226609A (en) High conduction semiconductor diode
GB1031976A (en) Contacting semiconductor bodies
GB1116363A (en) Semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees