GB1157324A - Memory System - Google Patents

Memory System

Info

Publication number
GB1157324A
GB1157324A GB458769A GB458769A GB1157324A GB 1157324 A GB1157324 A GB 1157324A GB 458769 A GB458769 A GB 458769A GB 458769 A GB458769 A GB 458769A GB 1157324 A GB1157324 A GB 1157324A
Authority
GB
United Kingdom
Prior art keywords
lines
row
circuits
sense
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB458769A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US527788A external-priority patent/US3284782A/en
Application filed by Radio Corporation of America filed Critical Radio Corporation of America
Publication of GB1157324A publication Critical patent/GB1157324A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356026—Bistable circuits using additional transistors in the input circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356034—Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration
    • H03K3/356043—Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration with synchronous operation

Abstract

1,157,324. Datastorage. RADIO CORPORATION OF AMERICA. 1 July, 1966 [16 Feb., 1966], No. 4587/69. Divided out of 1,157,323. Heading G4C. [Also in Division H3] In a memory system having a plurality of active storage circuits 102 functionally arranged in rows and columns, each column has first and second sense lines D a , Db, and each row has first and second row lines W 1 -W x , W 1 <SP>1</SP>- W x <SP>1</SP> so that by selectively energizing one of the first row lines W 1 -W x information in the associated row of storage circuits is read out to the first sense lines D a and by selectively energizing one of the second row lines W<SP>a1</SP>- W x <SP>1</SP> information in the associated row of storage circuits is read out to the second sense lines. Pair of word lines W 1 -W x , W 1 <SP>1</SP>W x <SP>1</SP> are fed from a first and second decoder 104, 106 so that two output conditions may be read out simultaneously. The storage circuits comprise insulated gate field effect transistors (Fig. 1, not shown), which are also disclosed in Specification 1,157,323. The input lines (82, 84) of each bi-stable storage circuit are connected to digit lines D 1a , D 1b -D na , D nb , of a data input and sense arrangement 110 consisting of a number of transistor circuits (120a, 120b) to read in information and also give an indication of the output state of the bi-stable circuits 102.
GB458769A 1966-02-16 1966-07-01 Memory System Expired GB1157324A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US527788A US3284782A (en) 1966-02-16 1966-02-16 Memory storage system
GB29683/66A GB1157323A (en) 1966-02-16 1966-07-01 Storage circuit

Publications (1)

Publication Number Publication Date
GB1157324A true GB1157324A (en) 1969-07-09

Family

ID=26260026

Family Applications (1)

Application Number Title Priority Date Filing Date
GB458769A Expired GB1157324A (en) 1966-02-16 1966-07-01 Memory System

Country Status (1)

Country Link
GB (1) GB1157324A (en)

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee