GB1153051A - Electrical Isolation of Semiconductor Circuit Components - Google Patents

Electrical Isolation of Semiconductor Circuit Components

Info

Publication number
GB1153051A
GB1153051A GB28061/66A GB2806166A GB1153051A GB 1153051 A GB1153051 A GB 1153051A GB 28061/66 A GB28061/66 A GB 28061/66A GB 2806166 A GB2806166 A GB 2806166A GB 1153051 A GB1153051 A GB 1153051A
Authority
GB
United Kingdom
Prior art keywords
semi
interconnections
transistor
conductor
oxide coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28061/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1153051A publication Critical patent/GB1153051A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221Crossover interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/764Air gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4821Bridge structure with air gap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB28061/66A 1965-06-30 1966-06-23 Electrical Isolation of Semiconductor Circuit Components Expired GB1153051A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46819665A 1965-06-30 1965-06-30

Publications (1)

Publication Number Publication Date
GB1153051A true GB1153051A (en) 1969-05-21

Family

ID=23858806

Family Applications (2)

Application Number Title Priority Date Filing Date
GB28061/66A Expired GB1153051A (en) 1965-06-30 1966-06-23 Electrical Isolation of Semiconductor Circuit Components
GB53245/68A Expired GB1153052A (en) 1965-06-30 1966-06-23 Manufacture of Semiconductor Devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB53245/68A Expired GB1153052A (en) 1965-06-30 1966-06-23 Manufacture of Semiconductor Devices

Country Status (3)

Country Link
JP (1) JPS503627B1 (enrdf_load_stackoverflow)
DE (1) DE1564860A1 (enrdf_load_stackoverflow)
GB (2) GB1153051A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5079280A (enrdf_load_stackoverflow) * 1973-11-09 1975-06-27
GB2221092A (en) * 1988-07-19 1990-01-24 Tektronix Inc "a semiconductor integrated circuit with temperature sensor"

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542573U (enrdf_load_stackoverflow) * 1978-09-14 1980-03-19
JPS5764877U (enrdf_load_stackoverflow) * 1980-10-06 1982-04-17
DE69831075D1 (de) 1998-10-21 2005-09-08 St Microelectronics Srl Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5079280A (enrdf_load_stackoverflow) * 1973-11-09 1975-06-27
GB2221092A (en) * 1988-07-19 1990-01-24 Tektronix Inc "a semiconductor integrated circuit with temperature sensor"
GB2221092B (en) * 1988-07-19 1992-06-03 Tektronix Inc Integrated circuit and method of treating an integrated circuit

Also Published As

Publication number Publication date
GB1153052A (en) 1969-05-21
JPS503627B1 (enrdf_load_stackoverflow) 1975-02-07
DE1564860A1 (de) 1969-10-16

Similar Documents

Publication Publication Date Title
US3293087A (en) Method of making isolated epitaxial field-effect device
GB1214203A (en) Improvements in and relating to integrated semiconductor circuits
GB1154805A (en) Monolithic Semiconductor Microcircuits with Improved Means for Connecting Points of Common Potential
GB972512A (en) Methods of making semiconductor devices
GB1144328A (en) Solid-state circuit consisting of a semiconductor body with active components, passive components, and conducting paths
GB1203086A (en) Ohmic contact and electrical lead for semiconductor devices
IL29307A (en) Voltage distribution system for integrated circuits
US3305708A (en) Insulated-gate field-effect semiconductor device
GB953917A (en) Improvements relating to semiconductor circuits
GB1133634A (en) Improvements in or relating to semiconductor voltage-dependent capacitors
GB1339095A (en) Fabrication of monolithic integrated circuits
GB1069755A (en) Improvements in or relating to semiconductor devices
GB1198696A (en) Semiconductor Devices and Methods of Making Them.
GB1364676A (en) Semiconductor integrated device
US3475664A (en) Ambient atmosphere isolated semiconductor devices
US3387193A (en) Diffused resistor for an integrated circuit
GB1260977A (en) Improvements in semiconductor devices
GB1088795A (en) Semiconductor devices with low leakage current across junction
GB1153051A (en) Electrical Isolation of Semiconductor Circuit Components
GB983343A (en) Semiconductive oscillator-mixer device
US3473979A (en) Semiconductor device
US3408543A (en) Combination capacitor and fieldeffect transistor
GB1103184A (en) Improvements relating to semiconductor circuits
US3482152A (en) Semiconductor devices having a field effect transistor structure
GB1264288A (enrdf_load_stackoverflow)

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee