GB1147015A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1147015A
GB1147015A GB2691/68A GB269168A GB1147015A GB 1147015 A GB1147015 A GB 1147015A GB 2691/68 A GB2691/68 A GB 2691/68A GB 269168 A GB269168 A GB 269168A GB 1147015 A GB1147015 A GB 1147015A
Authority
GB
United Kingdom
Prior art keywords
wafer
layer
produced
aluminium
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2691/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1147015A publication Critical patent/GB1147015A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/965Shaped junction formation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/983Zener diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB2691/68A 1967-01-26 1968-01-18 Semiconductor devices Expired GB1147015A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED52101A DE1300164B (de) 1967-01-26 1967-01-26 Verfahren zum Herstellen von Zenerdioden

Publications (1)

Publication Number Publication Date
GB1147015A true GB1147015A (en) 1969-04-02

Family

ID=7053905

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2691/68A Expired GB1147015A (en) 1967-01-26 1968-01-18 Semiconductor devices

Country Status (4)

Country Link
US (1) US3544397A (https=)
DE (1) DE1300164B (https=)
FR (1) FR1553289A (https=)
GB (1) GB1147015A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142200A (en) * 1975-10-27 1979-02-27 Nippon Telegraph & Telephone Corp. Semiconductor photodiodes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822374B1 (https=) * 1968-10-17 1973-07-05
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
US3988757A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode zeners
US3988770A (en) * 1973-12-14 1976-10-26 General Electric Company Deep finger diodes
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
NL121810C (https=) * 1955-11-04
NL237230A (https=) * 1958-03-19
FR84496E (fr) * 1963-02-15 1965-02-19 Intermetall Ges Fur Metallurg Procédé pour l'établissement d'un passage pn dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus
FR1372145A (fr) * 1963-02-15 1964-09-11 Intermetall Procédé pour l'établissement d'un passage p-n dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus
US3457469A (en) * 1965-11-15 1969-07-22 Motorola Inc Noise diode having an alloy zener junction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142200A (en) * 1975-10-27 1979-02-27 Nippon Telegraph & Telephone Corp. Semiconductor photodiodes

Also Published As

Publication number Publication date
DE1300164B (de) 1969-07-31
FR1553289A (https=) 1969-01-10
US3544397A (en) 1970-12-01

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