GB1141229A - Bistable semiconductive glass composition - Google Patents

Bistable semiconductive glass composition

Info

Publication number
GB1141229A
GB1141229A GB56999/67A GB5699967A GB1141229A GB 1141229 A GB1141229 A GB 1141229A GB 56999/67 A GB56999/67 A GB 56999/67A GB 5699967 A GB5699967 A GB 5699967A GB 1141229 A GB1141229 A GB 1141229A
Authority
GB
United Kingdom
Prior art keywords
bistable
glass
glass composition
dec
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB56999/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1141229A publication Critical patent/GB1141229A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

1,141,229. Semi-conducting glass; glass to metal seals. ITT INDUSTRIES Inc. 15 Dec., 1967 [20 Dec., 1966], No. 56999/67. Heading C1M. [Also in Divisions C7, H1 and H3] A semi-conducting glass consists of As, Te and Ge and has a composition within the shaded area A in Fig. 1. The glass may be used in a bi-stable solid state switching device wherein two spaced metallic contacts (e.g. of iron, nickel, or tungsten) are attached to a body thereof. A circuit using a switching device according to the invention is described (see Division H3].
GB56999/67A 1966-12-20 1967-12-15 Bistable semiconductive glass composition Expired GB1141229A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60321566A 1966-12-20 1966-12-20

Publications (1)

Publication Number Publication Date
GB1141229A true GB1141229A (en) 1969-01-29

Family

ID=24414509

Family Applications (1)

Application Number Title Priority Date Filing Date
GB56999/67A Expired GB1141229A (en) 1966-12-20 1967-12-15 Bistable semiconductive glass composition

Country Status (3)

Country Link
DE (1) DE1596786A1 (en)
FR (1) FR1562882A (en)
GB (1) GB1141229A (en)

Also Published As

Publication number Publication date
FR1562882A (en) 1969-04-11
DE1596786A1 (en) 1971-03-18

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