GB1130058A - Thin film space-charge-limited current triode - Google Patents
Thin film space-charge-limited current triodeInfo
- Publication number
- GB1130058A GB1130058A GB3703567A GB3703567A GB1130058A GB 1130058 A GB1130058 A GB 1130058A GB 3703567 A GB3703567 A GB 3703567A GB 3703567 A GB3703567 A GB 3703567A GB 1130058 A GB1130058 A GB 1130058A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- layer
- thin film
- regions
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000001894 space-charge-limited current method Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 101100188552 Arabidopsis thaliana OCT3 gene Proteins 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,130,058. Semi-conductor devices. HUGHES AIRCRAFT CO. 11 Aug., 1967 [3 Oct., 1966], No. 37035/67. Heading H1K. A space-charge limited current triode comprises a thin film of semi-conductor material disposed on an insulating substrate 6 and having a first region 12 of one conductivity type between second regions 8, 10 of opposite type, the second regions being provided with respective source and drain electrodes 16, 18, the first region having an insulated gate electrode 20 overlying a portion of its surface, and protective means being provided for preventing the formation of a surface inducted conduction channel or inversion layer in the first region. The protective means may consist of a layer 32 of silicon nitride on the portion of the surface of the first region not covered by the gate electrode, or a container 30 which is evacuated or filled with an inert gas to prevent the formation on the exposed surface of the region of an oxide or other undesired layer which would induce an inversion layer. In the preferred embodiment the thin film is a 1 or 2Á silicon layer epitaxially deposited on a sapphire substrate, and the electrodes consist of aluminium. The gate electrode is insulated by a silicon oxide or nitride layer 14 which includes a thin strip 28 covering the junction between the regions 10 and 12.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58368166A | 1966-10-03 | 1966-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1130058A true GB1130058A (en) | 1968-10-09 |
Family
ID=24334145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3703567A Expired GB1130058A (en) | 1966-10-03 | 1967-08-11 | Thin film space-charge-limited current triode |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1130058A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2455730A1 (en) * | 1973-12-03 | 1975-06-05 | Rca Corp | STABILIZED SEMICONDUCTOR COMPONENTS AND METHOD FOR MANUFACTURING THE SAME |
-
1967
- 1967-08-11 GB GB3703567A patent/GB1130058A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2455730A1 (en) * | 1973-12-03 | 1975-06-05 | Rca Corp | STABILIZED SEMICONDUCTOR COMPONENTS AND METHOD FOR MANUFACTURING THE SAME |
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