GB1127629A - Improved semi-conductor element - Google Patents

Improved semi-conductor element

Info

Publication number
GB1127629A
GB1127629A GB51308/65A GB5130865A GB1127629A GB 1127629 A GB1127629 A GB 1127629A GB 51308/65 A GB51308/65 A GB 51308/65A GB 5130865 A GB5130865 A GB 5130865A GB 1127629 A GB1127629 A GB 1127629A
Authority
GB
United Kingdom
Prior art keywords
insulated
oxide
contact
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51308/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of GB1127629A publication Critical patent/GB1127629A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
GB51308/65A 1964-12-03 1965-12-02 Improved semi-conductor element Expired GB1127629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR997223 1964-12-03

Publications (1)

Publication Number Publication Date
GB1127629A true GB1127629A (en) 1968-09-18

Family

ID=8843926

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51308/65A Expired GB1127629A (en) 1964-12-03 1965-12-02 Improved semi-conductor element

Country Status (4)

Country Link
US (1) US3436612A (cg-RX-API-DMAC10.html)
DE (1) DE1489788A1 (cg-RX-API-DMAC10.html)
GB (1) GB1127629A (cg-RX-API-DMAC10.html)
NL (1) NL6515671A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS52120768A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor device
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
USRE24537E (en) * 1952-07-29 1958-09-23 Unsymmetrical conductor arrangements
NL104654C (cg-RX-API-DMAC10.html) * 1952-12-31 1900-01-01
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
US2725505A (en) * 1953-11-30 1955-11-29 Rca Corp Semiconductor power devices
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture

Also Published As

Publication number Publication date
NL6515671A (cg-RX-API-DMAC10.html) 1966-06-06
DE1489788A1 (de) 1969-06-04
US3436612A (en) 1969-04-01

Similar Documents

Publication Publication Date Title
GB1002734A (en) Coupling transistor
US3512058A (en) High voltage transient protection for an insulated gate field effect transistor
MY6900284A (en) Semiconductor devices containing two or more circuit elements therein
GB1153428A (en) Improvements in Semiconductor Devices.
GB1520921A (en) Semiconductor devices
GB1254302A (en) Improvements in insulated gate field effect transistors
GB1129200A (en) High frequency field effect transistor
GB1060208A (en) Avalanche transistor
GB1173919A (en) Semiconductor Device with a pn-Junction
GB1322933A (en) Semiconductor device
GB1426683A (en) Leakage current prevention in semiconductor integrated circuit devices
GB1088795A (en) Semiconductor devices with low leakage current across junction
GB949646A (en) Improvements in or relating to semiconductor devices
GB983266A (en) Semiconductor switching devices
GB1103184A (en) Improvements relating to semiconductor circuits
GB1073135A (en) Semiconductor current limiter
GB1246864A (en) Transistor
GB1334745A (en) Semiconductor devices
GB1282616A (en) Semiconductor devices
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
GB1245765A (en) Surface diffused semiconductor devices
GB1238876A (cg-RX-API-DMAC10.html)
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1094336A (en) Thyristors
US3436612A (en) Semi-conductor device having dielectric and metal protectors