GB1124762A - Semi-conductor devices - Google Patents

Semi-conductor devices

Info

Publication number
GB1124762A
GB1124762A GB884/65A GB88465A GB1124762A GB 1124762 A GB1124762 A GB 1124762A GB 884/65 A GB884/65 A GB 884/65A GB 88465 A GB88465 A GB 88465A GB 1124762 A GB1124762 A GB 1124762A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor devices
conductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB884/65A
Other languages
English (en)
Inventor
Douglas Frederick Ridley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to GB884/65A priority Critical patent/GB1124762A/en
Priority to DE19651514182 priority patent/DE1514182B1/de
Priority to NL6517100A priority patent/NL6517100A/xx
Priority to FR44109A priority patent/FR1462034A/fr
Priority to US519046A priority patent/US3398030A/en
Priority to FR154839A priority patent/FR94777E/fr
Publication of GB1124762A publication Critical patent/GB1124762A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
GB884/65A 1965-01-08 1965-01-08 Semi-conductor devices Expired GB1124762A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB884/65A GB1124762A (en) 1965-01-08 1965-01-08 Semi-conductor devices
DE19651514182 DE1514182B1 (de) 1965-01-08 1965-12-18 Verfahren zum Herstellen einer Dreischicht-Halbleiterscheibe
NL6517100A NL6517100A (cg-RX-API-DMAC7.html) 1965-01-08 1965-12-29
FR44109A FR1462034A (fr) 1965-01-08 1965-12-29 Dispositif semi-conducteur et son procédé de fabrication
US519046A US3398030A (en) 1965-01-08 1966-01-06 Forming a semiconduuctor device by diffusing
FR154839A FR94777E (fr) 1965-01-08 1968-06-13 Dispositif semi-conducteur et son procédé de fabrication.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB884/65A GB1124762A (en) 1965-01-08 1965-01-08 Semi-conductor devices

Publications (1)

Publication Number Publication Date
GB1124762A true GB1124762A (en) 1968-08-21

Family

ID=9712186

Family Applications (1)

Application Number Title Priority Date Filing Date
GB884/65A Expired GB1124762A (en) 1965-01-08 1965-01-08 Semi-conductor devices

Country Status (5)

Country Link
US (1) US3398030A (cg-RX-API-DMAC7.html)
DE (1) DE1514182B1 (cg-RX-API-DMAC7.html)
FR (2) FR1462034A (cg-RX-API-DMAC7.html)
GB (1) GB1124762A (cg-RX-API-DMAC7.html)
NL (1) NL6517100A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260872B4 (de) 2002-12-23 2013-09-26 Beiersdorf Ag Verwendung von gelbildendem Polymer, Wasser, Alkohol und Meeresalgenextrakt zur Einstellung von Elastizität und Haftvermögen selbstklebender kosmetischer Polymermatrices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (cg-RX-API-DMAC7.html) * 1955-11-04
BE570082A (cg-RX-API-DMAC7.html) * 1957-08-07 1900-01-01
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL286507A (cg-RX-API-DMAC7.html) * 1961-12-11
US3281915A (en) * 1963-04-02 1966-11-01 Rca Corp Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
US3398030A (en) 1968-08-20
DE1514182B1 (de) 1970-11-19
FR94777E (fr) 1969-11-21
NL6517100A (cg-RX-API-DMAC7.html) 1966-07-11
FR1462034A (fr) 1966-12-09

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