GB1119523A - Improvements in opto-electronic semiconductor devices - Google Patents

Improvements in opto-electronic semiconductor devices

Info

Publication number
GB1119523A
GB1119523A GB33876/64A GB3387664A GB1119523A GB 1119523 A GB1119523 A GB 1119523A GB 33876/64 A GB33876/64 A GB 33876/64A GB 3387664 A GB3387664 A GB 3387664A GB 1119523 A GB1119523 A GB 1119523A
Authority
GB
United Kingdom
Prior art keywords
opto
semiconductor devices
electronic semiconductor
electronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33876/64A
Inventor
Peter Colin Newman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB33876/64A priority Critical patent/GB1119523A/en
Priority to US479546A priority patent/US3363155A/en
Priority to DE19651514269 priority patent/DE1514269A1/en
Priority to SE10698/65A priority patent/SE325348B/xx
Priority to DEN27196A priority patent/DE1298209B/en
Priority to NL6510725A priority patent/NL6510725A/xx
Priority to NL6510721A priority patent/NL6510721A/xx
Priority to BE668537A priority patent/BE668537A/xx
Priority to FR28808A priority patent/FR1443843A/en
Priority to FR28804A priority patent/FR1443840A/en
Priority to JP5020965A priority patent/JPS4214978B1/ja
Priority to BE668535A priority patent/BE668535A/xx
Publication of GB1119523A publication Critical patent/GB1119523A/en
Priority to US750997A priority patent/US3508126A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
GB33876/64A 1964-08-19 1964-08-19 Improvements in opto-electronic semiconductor devices Expired GB1119523A (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
GB33876/64A GB1119523A (en) 1964-08-19 1964-08-19 Improvements in opto-electronic semiconductor devices
US479546A US3363155A (en) 1964-08-19 1965-08-13 Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
DE19651514269 DE1514269A1 (en) 1964-08-19 1965-08-16 Opto-electronic transistor
SE10698/65A SE325348B (en) 1964-08-19 1965-08-16
DEN27196A DE1298209B (en) 1964-08-19 1965-08-17 Photoelectric semiconductor diode
NL6510725A NL6510725A (en) 1964-08-19 1965-08-17
NL6510721A NL6510721A (en) 1964-08-19 1965-08-17
BE668537A BE668537A (en) 1964-08-19 1965-08-19
FR28808A FR1443843A (en) 1964-08-19 1965-08-19 Semiconductor photodiode
FR28804A FR1443840A (en) 1964-08-19 1965-08-19 Optical-electronic effect transistor
JP5020965A JPS4214978B1 (en) 1964-08-19 1965-08-19
BE668535A BE668535A (en) 1964-08-19 1965-08-19
US750997A US3508126A (en) 1964-08-19 1968-07-18 Semiconductor photodiode with p-n junction spaced from heterojunction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB33876/64A GB1119523A (en) 1964-08-19 1964-08-19 Improvements in opto-electronic semiconductor devices

Publications (1)

Publication Number Publication Date
GB1119523A true GB1119523A (en) 1968-07-10

Family

ID=10358607

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33876/64A Expired GB1119523A (en) 1964-08-19 1964-08-19 Improvements in opto-electronic semiconductor devices

Country Status (2)

Country Link
JP (1) JPS4214978B1 (en)
GB (1) GB1119523A (en)

Also Published As

Publication number Publication date
JPS4214978B1 (en) 1967-08-21

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