GB1116514A - Improvements in semiconductor lasers - Google Patents

Improvements in semiconductor lasers

Info

Publication number
GB1116514A
GB1116514A GB4223865A GB4223865A GB1116514A GB 1116514 A GB1116514 A GB 1116514A GB 4223865 A GB4223865 A GB 4223865A GB 4223865 A GB4223865 A GB 4223865A GB 1116514 A GB1116514 A GB 1116514A
Authority
GB
United Kingdom
Prior art keywords
crystal
wavelength
semi
conductor
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4223865A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Battelle Development Corp
Original Assignee
Battelle Development Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Development Corp filed Critical Battelle Development Corp
Publication of GB1116514A publication Critical patent/GB1116514A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959—Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB4223865A 1964-10-21 1965-10-05 Improvements in semiconductor lasers Expired GB1116514A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964B0078998 DE1236099B (de) 1964-10-21 1964-10-21 Frequenzmodulation optischer Sender

Publications (1)

Publication Number Publication Date
GB1116514A true GB1116514A (en) 1968-06-06

Family

ID=6980121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4223865A Expired GB1116514A (en) 1964-10-21 1965-10-05 Improvements in semiconductor lasers

Country Status (3)

Country Link
DE (1) DE1236099B (de)
GB (1) GB1116514A (de)
NL (1) NL6512468A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747021A (en) * 1969-07-18 1973-07-17 Us Navy Wide range continuously tunable thin film laser
US3748593A (en) * 1970-11-17 1973-07-24 Method and means of construction of a semiconductor material for use as a laser
GB2134700A (en) * 1982-12-27 1984-08-15 Western Electric Co Target for electron-beam-pumped semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747021A (en) * 1969-07-18 1973-07-17 Us Navy Wide range continuously tunable thin film laser
US3748593A (en) * 1970-11-17 1973-07-24 Method and means of construction of a semiconductor material for use as a laser
GB2134700A (en) * 1982-12-27 1984-08-15 Western Electric Co Target for electron-beam-pumped semiconductor laser

Also Published As

Publication number Publication date
NL6512468A (de) 1966-04-22
DE1236099B (de) 1967-03-09

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