GB1113344A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1113344A GB1113344A GB34866/65A GB3486665A GB1113344A GB 1113344 A GB1113344 A GB 1113344A GB 34866/65 A GB34866/65 A GB 34866/65A GB 3486665 A GB3486665 A GB 3486665A GB 1113344 A GB1113344 A GB 1113344A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- guard ring
- region
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39083164A | 1964-08-20 | 1964-08-20 | |
| US67811267A | 1967-10-25 | 1967-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1113344A true GB1113344A (en) | 1968-05-15 |
Family
ID=27013292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB34866/65A Expired GB1113344A (en) | 1964-08-20 | 1965-08-13 | Semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3491273A (https=) |
| CA (1) | CA956038A (https=) |
| DE (2) | DE1514855C3 (https=) |
| GB (1) | GB1113344A (https=) |
| MY (1) | MY6900229A (https=) |
| NL (1) | NL6510931A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2012945A1 (https=) * | 1969-03-25 | 1970-10-08 | ||
| JPS5124194Y1 (https=) * | 1973-10-23 | 1976-06-21 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1245765A (en) * | 1967-10-13 | 1971-09-08 | Gen Electric | Surface diffused semiconductor devices |
| US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
| DE1926989A1 (de) * | 1969-05-27 | 1970-12-03 | Beneking Prof Dr Rer Nat Heinz | Hochfrequenzleitung |
| DE1944280B2 (de) * | 1969-09-01 | 1971-06-09 | Monolitisch integrierte festkoerperschaltung aus feldeffekttransistoren | |
| US3763550A (en) * | 1970-12-03 | 1973-10-09 | Gen Motors Corp | Geometry for a pnp silicon transistor with overlay contacts |
| US3697828A (en) * | 1970-12-03 | 1972-10-10 | Gen Motors Corp | Geometry for a pnp silicon transistor with overlay contacts |
| US3767981A (en) * | 1971-06-04 | 1973-10-23 | Signetics Corp | High voltage planar diode structure and method |
| US3961358A (en) * | 1973-02-21 | 1976-06-01 | Rca Corporation | Leakage current prevention in semiconductor integrated circuit devices |
| US4063274A (en) * | 1976-12-10 | 1977-12-13 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
| JPS5753963A (en) * | 1980-09-17 | 1982-03-31 | Toshiba Corp | Semiconductor device |
| US4430663A (en) | 1981-03-25 | 1984-02-07 | Bell Telephone Laboratories, Incorporated | Prevention of surface channels in silicon semiconductor devices |
| DE3333242C2 (de) * | 1982-09-13 | 1995-08-17 | Nat Semiconductor Corp | Monolithisch integrierter Halbleiterschaltkreis |
| US4580156A (en) * | 1983-12-30 | 1986-04-01 | At&T Bell Laboratories | Structured resistive field shields for low-leakage high voltage devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
| NL251934A (https=) * | 1959-05-27 | |||
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| IT699934A (https=) * | 1962-06-29 | |||
| BE636317A (https=) * | 1962-08-23 | 1900-01-01 | ||
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
| US3292240A (en) * | 1963-08-08 | 1966-12-20 | Ibm | Method of fabricating microminiature functional components |
-
1965
- 1965-08-12 CA CA938,043A patent/CA956038A/en not_active Expired
- 1965-08-13 GB GB34866/65A patent/GB1113344A/en not_active Expired
- 1965-08-20 NL NL6510931A patent/NL6510931A/xx unknown
- 1965-08-20 DE DE1514855A patent/DE1514855C3/de not_active Expired
- 1965-08-20 DE DE1789119A patent/DE1789119C3/de not_active Expired
-
1967
- 1967-10-25 US US678112A patent/US3491273A/en not_active Expired - Lifetime
-
1969
- 1969-12-31 MY MY1969229A patent/MY6900229A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2012945A1 (https=) * | 1969-03-25 | 1970-10-08 | ||
| JPS5124194Y1 (https=) * | 1973-10-23 | 1976-06-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1789119A1 (de) | 1972-04-20 |
| US3491273A (en) | 1970-01-20 |
| CA956038A (en) | 1974-10-08 |
| DE1514855B2 (de) | 1971-09-30 |
| DE1514855C3 (de) | 1974-01-24 |
| NL6510931A (https=) | 1966-02-21 |
| MY6900229A (en) | 1969-12-31 |
| DE1789119B2 (de) | 1974-04-25 |
| DE1789119C3 (de) | 1974-11-21 |
| DE1514855A1 (de) | 1970-09-24 |
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