GB1109451A - Improvements in or relating to phototransistors - Google Patents

Improvements in or relating to phototransistors

Info

Publication number
GB1109451A
GB1109451A GB3431865A GB3431865A GB1109451A GB 1109451 A GB1109451 A GB 1109451A GB 3431865 A GB3431865 A GB 3431865A GB 3431865 A GB3431865 A GB 3431865A GB 1109451 A GB1109451 A GB 1109451A
Authority
GB
United Kingdom
Prior art keywords
collector
wafer
region
transistor
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3431865A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1109451A publication Critical patent/GB1109451A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,109,451. Semi-conductor devices. SIEMENS A.G. 11 Aug., 1965 [12 Aug., 1964], No. 34318/65. Heading H1K. A photo-transistor is arranged so that the radiation passes through part of the collector region and is incident on the collector junction. As shown, Fig. 2, a photo-transistor is produced by masking part of one face of a silicon or germanium wafer 11 with silicon dioxide and diffusing impurities into the exposed parts of the wafer to form base region 12 and collector region 13. Part of the oxide mask is removed to accommodate emitter electrode 14, the remaining part 16 of the mask forming a protective covering for the edges of the junctions. The collector electrode comprises a vapour deposited metal spot 15 or a vapour deposited metal network covering the collector region. In another embodiment, Fig. 1 (not shown), base and collector regions (2) and (3) respectively, are diffused into a surface of an N-type wafer (1) and are etched to form a mesa. The wafer is mounted on the gold-plated surface of support (4) of Vacon which forms the emitter electrode and a gold-antimony foil (5) forms the collector electrode. The base and collector regions may also be formed by epitaxial deposition from a gaseous halogen and/or hydrogen compound of the semi-conductor material. An ohmic contact may also be provided on the base region and the transistor may also be formed with a hook collector. The device may be made sensitive to X-rays, high-energy I.R. radiation, U.V. radiation, and electron or ion beams by suitable choice of semi-conductor material.
GB3431865A 1964-08-12 1965-08-11 Improvements in or relating to phototransistors Expired GB1109451A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964S0092605 DE1259474B (en) 1964-08-12 1964-08-12 Unbalanced phototransistor

Publications (1)

Publication Number Publication Date
GB1109451A true GB1109451A (en) 1968-04-10

Family

ID=7517338

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3431865A Expired GB1109451A (en) 1964-08-12 1965-08-11 Improvements in or relating to phototransistors

Country Status (5)

Country Link
AT (1) AT259041B (en)
CH (1) CH440474A (en)
DE (1) DE1259474B (en)
GB (1) GB1109451A (en)
NL (1) NL6509114A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318383B2 (en) * 1974-10-07 1978-06-14

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2923836A (en) * 1955-04-15 1960-02-02 Ibm Bistable transistor circuit
FR1180896A (en) * 1957-08-07 1959-06-10 Electronique & Physique Improvements to photo-sensitive suits

Also Published As

Publication number Publication date
DE1259474B (en) 1968-01-25
NL6509114A (en) 1966-02-14
CH440474A (en) 1967-07-31
AT259041B (en) 1967-12-27

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