GB1089817A - A thin magnetic film store and a method of operating such a store - Google Patents

A thin magnetic film store and a method of operating such a store

Info

Publication number
GB1089817A
GB1089817A GB4480966A GB4480966A GB1089817A GB 1089817 A GB1089817 A GB 1089817A GB 4480966 A GB4480966 A GB 4480966A GB 4480966 A GB4480966 A GB 4480966A GB 1089817 A GB1089817 A GB 1089817A
Authority
GB
United Kingdom
Prior art keywords
field
film
magnetization
biasing
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4480966A
Inventor
Simon Middelhoek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1089817A publication Critical patent/GB1089817A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

1,089,817. Magnetic storage devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 7, 1966 [Nov. 2, 1965], No. 44809/66. Heading H1T. [Also in Division H3] A data storage device consists of two thin magnetic films having parallel easy axes and different critical switching fields, and means for applying a biasing magnetic field to rotate the magnetization of one film towards the hard axis without substantially rotating the magnetization of the other film. In Fig. 1 the storage film 12 has a critical field H KS of 5À0 oersted and the switching film 14 has a critical field H KL of 0À5 oersted. The films are evaporated on to a non-magnetic substrate and are separated by a layer 13 of SiO 2 . The biasing field, which may be supplied by a conductor parallel to the easy axis, by a coil or by a permanent magnet, may be applied continuously or only prior to and during a read operation. For read-out if the biasing field is equal to H KL , an equal and opposite field of 0À5 oersted is applied by passing current through a word line, allowing the magnetization of the switching film to fall back to the easy axis in a direction determined by the direction of magnetization of the storage film. The polarity of the output voltage induced in a sense line parallel to the hard axis indicates the data stored. For writing, a word field equal to or greater than the sum of H KS and the biasing field is applied simultaneously with a bit field parallel to the easy axis, so that the magnetization of the storage film is switched. The bit field preferably terminates, and may start, later than the word field. A matrix is described (Fig. 5, not shown) having either separate or common bitsense lines.
GB4480966A 1965-11-02 1966-10-07 A thin magnetic film store and a method of operating such a store Expired GB1089817A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1510865A CH427908A (en) 1965-11-02 1965-11-02 Method for the operation of a thin-film memory with non-destructive read operations

Publications (1)

Publication Number Publication Date
GB1089817A true GB1089817A (en) 1967-11-08

Family

ID=4406415

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4480966A Expired GB1089817A (en) 1965-11-02 1966-10-07 A thin magnetic film store and a method of operating such a store

Country Status (6)

Country Link
CH (1) CH427908A (en)
DE (1) DE1499732A1 (en)
FR (1) FR1503011A (en)
GB (1) GB1089817A (en)
NL (1) NL6615425A (en)
SE (1) SE346649B (en)

Also Published As

Publication number Publication date
CH427908A (en) 1967-01-15
NL6615425A (en) 1967-05-03
FR1503011A (en) 1967-11-24
DE1499732A1 (en) 1970-03-19
SE346649B (en) 1972-07-10

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