GB1089817A - A thin magnetic film store and a method of operating such a store - Google Patents
A thin magnetic film store and a method of operating such a storeInfo
- Publication number
- GB1089817A GB1089817A GB4480966A GB4480966A GB1089817A GB 1089817 A GB1089817 A GB 1089817A GB 4480966 A GB4480966 A GB 4480966A GB 4480966 A GB4480966 A GB 4480966A GB 1089817 A GB1089817 A GB 1089817A
- Authority
- GB
- United Kingdom
- Prior art keywords
- field
- film
- magnetization
- biasing
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
1,089,817. Magnetic storage devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 7, 1966 [Nov. 2, 1965], No. 44809/66. Heading H1T. [Also in Division H3] A data storage device consists of two thin magnetic films having parallel easy axes and different critical switching fields, and means for applying a biasing magnetic field to rotate the magnetization of one film towards the hard axis without substantially rotating the magnetization of the other film. In Fig. 1 the storage film 12 has a critical field H KS of 5À0 oersted and the switching film 14 has a critical field H KL of 0À5 oersted. The films are evaporated on to a non-magnetic substrate and are separated by a layer 13 of SiO 2 . The biasing field, which may be supplied by a conductor parallel to the easy axis, by a coil or by a permanent magnet, may be applied continuously or only prior to and during a read operation. For read-out if the biasing field is equal to H KL , an equal and opposite field of 0À5 oersted is applied by passing current through a word line, allowing the magnetization of the switching film to fall back to the easy axis in a direction determined by the direction of magnetization of the storage film. The polarity of the output voltage induced in a sense line parallel to the hard axis indicates the data stored. For writing, a word field equal to or greater than the sum of H KS and the biasing field is applied simultaneously with a bit field parallel to the easy axis, so that the magnetization of the storage film is switched. The bit field preferably terminates, and may start, later than the word field. A matrix is described (Fig. 5, not shown) having either separate or common bitsense lines.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1510865A CH427908A (en) | 1965-11-02 | 1965-11-02 | Method for the operation of a thin-film memory with non-destructive read operations |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1089817A true GB1089817A (en) | 1967-11-08 |
Family
ID=4406415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4480966A Expired GB1089817A (en) | 1965-11-02 | 1966-10-07 | A thin magnetic film store and a method of operating such a store |
Country Status (6)
Country | Link |
---|---|
CH (1) | CH427908A (en) |
DE (1) | DE1499732A1 (en) |
FR (1) | FR1503011A (en) |
GB (1) | GB1089817A (en) |
NL (1) | NL6615425A (en) |
SE (1) | SE346649B (en) |
-
1965
- 1965-11-02 CH CH1510865A patent/CH427908A/en unknown
-
1966
- 1966-10-07 GB GB4480966A patent/GB1089817A/en not_active Expired
- 1966-10-29 DE DE19661499732 patent/DE1499732A1/en active Pending
- 1966-11-01 NL NL6615425A patent/NL6615425A/xx unknown
- 1966-11-02 SE SE1500866A patent/SE346649B/xx unknown
- 1966-11-02 FR FR8122A patent/FR1503011A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH427908A (en) | 1967-01-15 |
NL6615425A (en) | 1967-05-03 |
FR1503011A (en) | 1967-11-24 |
DE1499732A1 (en) | 1970-03-19 |
SE346649B (en) | 1972-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3233228A (en) | Planar-hall device | |
GB1250085A (en) | ||
US3125743A (en) | Nondestructive readout of magnetic cores | |
GB937823A (en) | Improvements in or relating to magnetic data stores | |
GB1318095A (en) | Magnetic recording | |
US3191162A (en) | Magnetic thin film memory cell | |
GB887157A (en) | Information storage device | |
GB1099980A (en) | Coupled film storage device | |
US2964738A (en) | Hall effect memory device | |
US3295115A (en) | Thin magnetic film memory system | |
US3786447A (en) | Information propagation path switching device | |
GB988189A (en) | Improvements in and relating to bistable storage units | |
GB1089817A (en) | A thin magnetic film store and a method of operating such a store | |
US3414891A (en) | Nondestructive readout thin film memory | |
GB942661A (en) | Improvements in or relating to magnetizing means | |
US3521252A (en) | Magnetic memory element having two thin films of differing coercive force | |
GB1111317A (en) | Improvements in magnetic memories | |
GB942674A (en) | Improvements in or relating to magnetic data storage devices | |
US3513450A (en) | Cylindrical film storage device with circumferential conductor overlapping the film edge | |
GB1006855A (en) | Improvements relating to digital magnetic data storage devices | |
US3593325A (en) | Magnetic thin film storage device for nondestructive readout thereof | |
GB919023A (en) | Improvements in or relating to data stores | |
GB1076569A (en) | Improvements in or relating to thin magnetic film storage devices | |
US3495224A (en) | Thin film memory system | |
US3559191A (en) | Thin-ferromagnetic-film memory element using rf mixing for readout operation |