GB1076569A - Improvements in or relating to thin magnetic film storage devices - Google Patents
Improvements in or relating to thin magnetic film storage devicesInfo
- Publication number
- GB1076569A GB1076569A GB35903/64A GB3590364A GB1076569A GB 1076569 A GB1076569 A GB 1076569A GB 35903/64 A GB35903/64 A GB 35903/64A GB 3590364 A GB3590364 A GB 3590364A GB 1076569 A GB1076569 A GB 1076569A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cell
- film
- line
- read
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
1,076,569. Magnetic information storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. Sept. 2, 1964 [Sept. 27, 1963], No. 35903/64. Heading H3B. [Also in Division H1] Non-destructive read-out of a thin magnetic film store is achieved by providing a keeper member of magnetic material adjacent each storage cell, effective to return the cell to its original magnetization direction after it has been switched to the hard direction for a time less than the relaxation time constant of the field due to the keeper member. The member comprises soft magnetic material which may be of ferrite or a vapour deposited film and may be isotropic or anisotropic. The relaxation time constant is preferably between 5 and 10 nano-seconds. The member may be in the form of a sheet covering a plane matrix (Fig. 5, not shown) or may form the substrate upon which the film elements are deposited. In the latter case the sheet is provided with a copper coating to act as return conductor for the bit lines (Fig. 7, not shown). Eddy currents induced in the conductive layer tend to assist restoration of the film to its initial state after switching. In other embodiments a separate member is provided for each film and has a similar size and shape to the film. In Fig. 9, store cell 15 and read cell 14 are driven to opposite remanent states by a bit pulse in line B and a word pulse in line W. During read-out eddy currents tend to inhibit switching of store cell 15 so that on removing the read-out pulse cell 14 is restored by the fields due to cell 15 and to the eddy currents in line B. In a modification the sense line and bit line are separate (Fig. 10, not shown), while in a further modification inner and outer bit/sense lines are provided interconnected at one end by an impedance, and connected at the same end to the conductive substrate by a second impedance, while the other end of the outer conductor is connected directly to the substrate. Cells 14 and 15 may exhibit a different coercive force.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1194363A CH412010A (en) | 1963-09-27 | 1963-09-27 | Magnetic layer storage |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1076569A true GB1076569A (en) | 1967-07-19 |
Family
ID=4378352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB35903/64A Expired GB1076569A (en) | 1963-09-27 | 1964-09-02 | Improvements in or relating to thin magnetic film storage devices |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH412010A (en) |
DE (2) | DE1271188B (en) |
GB (1) | GB1076569A (en) |
NL (1) | NL6411178A (en) |
SE (1) | SE306560B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1359589A2 (en) * | 2002-04-25 | 2003-11-05 | Hewlett-Packard Company | Conductor structure for a magnetic memory |
EP1435622A2 (en) * | 2002-12-27 | 2004-07-07 | Kabushiki Kaisha Toshiba | Magnetic random access memory for storing information utilizing magneto-resistive effects |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL181228B (en) * | 1953-09-09 | Cit Alcatel | TOOTH CLUTCH. | |
US3030612A (en) * | 1956-12-07 | 1962-04-17 | Sperry Rand Corp | Magnetic apparatus and methods |
US3092812A (en) * | 1957-05-10 | 1963-06-04 | Sperry Rand Corp | Non-destructive sensing of thin film magnetic cores |
NL113780C (en) * | 1957-10-23 | |||
GB895248A (en) * | 1958-08-07 | 1962-05-02 | Nat Res Dev | Improvements relating to magnetic storage devices |
US3077586A (en) * | 1959-05-25 | 1963-02-12 | Ibm | Magnetic storage device |
NL252594A (en) * | 1959-06-16 | |||
FR1303405A (en) * | 1961-01-17 | 1962-09-07 | Sperry Rand Corp | Improvement in longitudinal guided exploration memories |
FR1306495A (en) * | 1961-02-13 | 1962-10-13 | Sperry Rand Corp | Memory cell |
FR1321622A (en) * | 1962-02-13 | 1963-03-22 | Sperry Rand Corp | Process for obtaining magnetic elements with multiple layers |
-
1963
- 1963-09-27 CH CH1194363A patent/CH412010A/en unknown
-
1964
- 1964-04-25 SE SE11574/64*A patent/SE306560B/xx unknown
- 1964-09-02 GB GB35903/64A patent/GB1076569A/en not_active Expired
- 1964-09-22 DE DEP1271A patent/DE1271188B/en active Pending
- 1964-09-22 DE DEJ26582A patent/DE1236575B/en active Pending
- 1964-09-24 NL NL6411178A patent/NL6411178A/xx unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1359589A2 (en) * | 2002-04-25 | 2003-11-05 | Hewlett-Packard Company | Conductor structure for a magnetic memory |
EP1359589A3 (en) * | 2002-04-25 | 2003-12-17 | Hewlett-Packard Company | Conductor structure for a magnetic memory |
EP1435622A2 (en) * | 2002-12-27 | 2004-07-07 | Kabushiki Kaisha Toshiba | Magnetic random access memory for storing information utilizing magneto-resistive effects |
EP1435622A3 (en) * | 2002-12-27 | 2004-07-28 | Kabushiki Kaisha Toshiba | Magnetic random access memory for storing information utilizing magneto-resistive effects |
US6862210B2 (en) | 2002-12-27 | 2005-03-01 | Kabushiki Kaisha Toshiba | Magnetic random access memory for storing information utilizing magneto-resistive effects |
Also Published As
Publication number | Publication date |
---|---|
SE306560B (en) | 1968-12-02 |
DE1236575B (en) | 1967-03-16 |
CH412010A (en) | 1966-04-30 |
DE1271188B (en) | 1968-06-27 |
NL6411178A (en) | 1965-03-29 |
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