GB1080560A - Semiconductor diode device - Google Patents

Semiconductor diode device

Info

Publication number
GB1080560A
GB1080560A GB53009/64A GB5300964A GB1080560A GB 1080560 A GB1080560 A GB 1080560A GB 53009/64 A GB53009/64 A GB 53009/64A GB 5300964 A GB5300964 A GB 5300964A GB 1080560 A GB1080560 A GB 1080560A
Authority
GB
United Kingdom
Prior art keywords
wafer
oxide
apertures
opposite
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB53009/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1080560A publication Critical patent/GB1080560A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/1266—O, S, or organic compound in metal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB53009/64A 1964-01-02 1964-12-31 Semiconductor diode device Expired GB1080560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US335300A US3293010A (en) 1964-01-02 1964-01-02 Passivated alloy diode

Publications (1)

Publication Number Publication Date
GB1080560A true GB1080560A (en) 1967-08-23

Family

ID=23311179

Family Applications (1)

Application Number Title Priority Date Filing Date
GB53009/64A Expired GB1080560A (en) 1964-01-02 1964-12-31 Semiconductor diode device

Country Status (6)

Country Link
US (1) US3293010A (enExample)
BE (1) BE657756A (enExample)
CH (1) CH419356A (enExample)
DE (1) DE1489133A1 (enExample)
GB (1) GB1080560A (enExample)
NL (1) NL6415321A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764759A1 (de) * 1968-07-31 1972-02-03 Telefunken Patent Verfahren zum Kontaktieren einer Halbleiterzone

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457469A (en) * 1965-11-15 1969-07-22 Motorola Inc Noise diode having an alloy zener junction
DE1514655A1 (de) * 1965-12-30 1969-08-28 Siemens Ag Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3612959A (en) * 1969-01-31 1971-10-12 Unitrode Corp Planar zener diodes having uniform junction breakdown characteristics
US3649882A (en) * 1970-05-13 1972-03-14 Albert Louis Hoffman Diffused alloyed emitter and the like and a method of manufacture thereof
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL189769C (nl) * 1953-12-30 Amp Akzo Corp Werkwijze voor het handhaven van badoplossingen voor het stroomloos afzetten van koper op substraatplaten in inrichtingen uit metaal.
BE538469A (enExample) * 1954-05-27
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
BE539938A (enExample) * 1954-07-21
US2861909A (en) * 1955-04-25 1958-11-25 Rca Corp Semiconductor devices
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
US3180766A (en) * 1958-12-30 1965-04-27 Raytheon Co Heavily doped base rings
US3124493A (en) * 1959-01-26 1964-03-10 Method for making the same
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764759A1 (de) * 1968-07-31 1972-02-03 Telefunken Patent Verfahren zum Kontaktieren einer Halbleiterzone

Also Published As

Publication number Publication date
DE1489133A1 (de) 1969-05-08
CH419356A (fr) 1966-08-31
NL6415321A (enExample) 1965-07-05
US3293010A (en) 1966-12-20
BE657756A (enExample) 1965-04-16

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