GB1069924A - Improvements in or relating to signal translating feedback circuits - Google Patents

Improvements in or relating to signal translating feedback circuits

Info

Publication number
GB1069924A
GB1069924A GB35428/64A GB3542864A GB1069924A GB 1069924 A GB1069924 A GB 1069924A GB 35428/64 A GB35428/64 A GB 35428/64A GB 3542864 A GB3542864 A GB 3542864A GB 1069924 A GB1069924 A GB 1069924A
Authority
GB
United Kingdom
Prior art keywords
deposited
cadmium
field effect
effect transistor
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35428/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB1069924A publication Critical patent/GB1069924A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB35428/64A 1963-12-02 1964-08-28 Improvements in or relating to signal translating feedback circuits Expired GB1069924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US327263A US3265981A (en) 1963-12-02 1963-12-02 Thin-film electrical networks with nonresistive feedback arrangement

Publications (1)

Publication Number Publication Date
GB1069924A true GB1069924A (en) 1967-05-24

Family

ID=23275819

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35428/64A Expired GB1069924A (en) 1963-12-02 1964-08-28 Improvements in or relating to signal translating feedback circuits

Country Status (4)

Country Link
US (1) US3265981A (cg-RX-API-DMAC7.html)
DE (1) DE1464997B1 (cg-RX-API-DMAC7.html)
GB (1) GB1069924A (cg-RX-API-DMAC7.html)
SE (1) SE311935B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378783A (en) * 1965-12-13 1968-04-16 Rca Corp Optimized digital amplifier utilizing insulated-gate field-effect transistors
US3405368A (en) * 1965-12-30 1968-10-08 Navy Usa Band-pass amplifier using field effect transistors
US3484709A (en) * 1966-06-13 1969-12-16 Gates Radio Co Solid state audio driver circuit
US3440352A (en) * 1966-09-09 1969-04-22 Bell Telephone Labor Inc Piezoresistance element microphone circuit
DE2159592C3 (de) * 1971-12-01 1981-12-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiteranordnung
FR2259486B1 (cg-RX-API-DMAC7.html) * 1974-01-25 1978-03-31 Commissariat Energie Atomique
US4059811A (en) * 1976-12-20 1977-11-22 International Business Machines Corporation Integrated circuit amplifier
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002090A (en) * 1958-08-27 1961-09-26 Hazeltine Research Inc Automatic-gain-control system
US3208002A (en) * 1959-09-18 1965-09-21 Texas Instruments Inc Semiconductor integrated circuit device using field-effect transistors
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
NL264275A (cg-RX-API-DMAC7.html) * 1960-05-02
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
US3082380A (en) * 1961-07-13 1963-03-19 Sonotone Corp Transistor amplifier stage with high input impedance
US3210677A (en) * 1962-05-28 1965-10-05 Westinghouse Electric Corp Unipolar-bipolar semiconductor amplifier
NL293447A (cg-RX-API-DMAC7.html) * 1962-05-31

Also Published As

Publication number Publication date
SE311935B (cg-RX-API-DMAC7.html) 1969-06-30
US3265981A (en) 1966-08-09
DE1464997B1 (de) 1970-03-19

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