GB1054360A - - Google Patents
Info
- Publication number
- GB1054360A GB1054360A GB1054360DA GB1054360A GB 1054360 A GB1054360 A GB 1054360A GB 1054360D A GB1054360D A GB 1054360DA GB 1054360 A GB1054360 A GB 1054360A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrates
- source
- semi
- gallium
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 6
- 229910052733 gallium Inorganic materials 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000005494 condensation Effects 0.000 abstract 3
- 238000009833 condensation Methods 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- 238000002407 reforming Methods 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0094470 | 1964-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1054360A true GB1054360A (hu) |
Family
ID=7518715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1054360D Active GB1054360A (hu) | 1964-12-05 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1544255A1 (hu) |
| FR (1) | FR1455657A (hu) |
| GB (1) | GB1054360A (hu) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852129A (en) * | 1972-04-05 | 1974-12-03 | Philips Corp | Method of carrying out diffusions with two sources |
| US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
-
0
- GB GB1054360D patent/GB1054360A/en active Active
-
1964
- 1964-12-05 DE DE19641544255 patent/DE1544255A1/de active Pending
-
1965
- 1965-11-29 FR FR40144A patent/FR1455657A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852129A (en) * | 1972-04-05 | 1974-12-03 | Philips Corp | Method of carrying out diffusions with two sources |
| US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1544255A1 (de) | 1970-07-02 |
| FR1455657A (fr) | 1966-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2879190A (en) | Fabrication of silicon devices | |
| GB1269431A (en) | Improvements in or relating to methods for depositing material upon heated semiconductor crystals | |
| GB1126309A (en) | Process for diffusing gold into a semiconductor material | |
| GB1228920A (hu) | ||
| GB983004A (en) | Improvements in and relating to methods of thermal treatment of semiconductor material | |
| GB1260233A (en) | Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase | |
| GB1054360A (hu) | ||
| GB1387023A (en) | Vapour deposition | |
| GB1132491A (en) | Improvements in or relating to the manufacture of semiconductor systems | |
| US3389022A (en) | Method for producing silicon carbide layers on silicon substrates | |
| NL279828A (hu) | ||
| GB1119050A (en) | Improvements in or relating to the manufacture of semiconductor devices by epitaxialdeposition | |
| GB1207748A (en) | DOUBLE DEPOSITIONS OF BBr3, IN SILICON | |
| US3397094A (en) | Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere | |
| US3852129A (en) | Method of carrying out diffusions with two sources | |
| GB1332994A (en) | Method of diffusing an impurity into a semiconductor body | |
| ES270156A1 (es) | Metodo para ajustar una presiën de vapor de una sustancia en un espacio | |
| GB1037146A (en) | Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type | |
| GB1124328A (en) | Improvements in or relating to the epitaxial deposition of crystalline layers | |
| GB977003A (en) | Improvements in or relating to semi-conductor arrangements | |
| GB1258226A (hu) | ||
| GB1075555A (en) | Process for the formation of a layer of a semiconductor material on a crystalline base | |
| US3036006A (en) | Method of doping a silicon monocrystal | |
| GB1209313A (en) | HIGH VOLTAGE n-p-n TRANSISTORS | |
| US3532565A (en) | Antimony pentachloride diffusion |