GB1045978A - A semiconductor element, and a process for its production - Google Patents
A semiconductor element, and a process for its productionInfo
- Publication number
- GB1045978A GB1045978A GB30250/63A GB3025063A GB1045978A GB 1045978 A GB1045978 A GB 1045978A GB 30250/63 A GB30250/63 A GB 30250/63A GB 3025063 A GB3025063 A GB 3025063A GB 1045978 A GB1045978 A GB 1045978A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insb
- inclusions
- semi
- conductor
- crsb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- 239000011572 manganese Substances 0.000 abstract 3
- 229910019963 CrSb Inorganic materials 0.000 abstract 2
- 229910016964 MnSb Inorganic materials 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 230000005291 magnetic effect Effects 0.000 abstract 2
- 229910052748 manganese Inorganic materials 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 230000005294 ferromagnetic effect Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
- H01F1/0311—Compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/405—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of IV type, e.g. Ge1-xMnx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES80682A DE1238987B (de) | 1961-08-10 | 1962-07-31 | Halbleiterkoerper fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften |
| US273776A US3226225A (en) | 1962-07-31 | 1963-04-17 | Electronic semiconductor members and method of their manufacture |
| DES0084738 | 1963-04-18 | ||
| DES84816A DE1281578B (de) | 1962-07-31 | 1963-04-23 | Sonde zum Erfassen magnetischer Felder unter Verwendung eines Halbleiterkoerpers fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1045978A true GB1045978A (en) | 1966-10-19 |
Family
ID=27437551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30250/63A Expired GB1045978A (en) | 1962-07-31 | 1963-07-30 | A semiconductor element, and a process for its production |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH413975A (enrdf_load_stackoverflow) |
| GB (1) | GB1045978A (enrdf_load_stackoverflow) |
| NL (1) | NL150624B (enrdf_load_stackoverflow) |
| SE (1) | SE332452B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2443743A1 (fr) * | 1978-12-04 | 1980-07-04 | Colburn William | Dispositif electronique contenant une matiere composite et son procede de realisation |
-
1963
- 1963-07-01 CH CH817063A patent/CH413975A/de unknown
- 1963-07-29 NL NL63295918A patent/NL150624B/xx unknown
- 1963-07-30 SE SE08391/63A patent/SE332452B/xx unknown
- 1963-07-30 GB GB30250/63A patent/GB1045978A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2443743A1 (fr) * | 1978-12-04 | 1980-07-04 | Colburn William | Dispositif electronique contenant une matiere composite et son procede de realisation |
Also Published As
| Publication number | Publication date |
|---|---|
| NL150624B (nl) | 1976-08-16 |
| CH413975A (de) | 1966-05-31 |
| SE332452B (enrdf_load_stackoverflow) | 1971-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tabassam et al. | Co2YZ (Y= Cr, Nb, Ta, V and Z= Al, Ga) Heusler alloys under the effect of pressure and strain | |
| Hossain et al. | Structural, elastic, electronic, magnetic and thermoelectric properties of new quaternary Heusler compounds CoZrMnX (X= Al, Ga, Ge, In) | |
| Chikazumi et al. | On the origin of magnetic anisotropy induced by magnetic annealing | |
| US10608167B2 (en) | Spin logic with magnetic insulators switched by spin orbit coupling | |
| Dahmane et al. | Investigations of the structural, electronic, magnetic, and half-metallic behavior of Co2MnZ (Z= Al, Ge, Si, Ga) Full-Heusler compounds | |
| GB1525959A (en) | Magnetic devices including amorphous alloys | |
| US2778802A (en) | Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron | |
| US2894234A (en) | Electric variable resistance devices | |
| Zhang et al. | First-principles investigation of equiatomic quaternary heusler alloys NbVMnAl and NbFeCrAl and a discussion of the generalized electron-filling rule | |
| Vivas et al. | Experimental evidences of enhanced magnetocaloric properties at room temperature and half-metallicity on Fe2MnSi-based Heusler alloys | |
| El Amine Monir et al. | Half-metallic Ferromagnetism in Novel Rh 2-based Full-Heusler Alloys Rh 2 Fe Z (Z= Ga and In) | |
| GB1045978A (en) | A semiconductor element, and a process for its production | |
| Phadke et al. | Longitudinal magnetoresistance in the Extreme Quantum Limit in nonparabolic semiconductors | |
| Beloufa et al. | Computational investigation of CrFeZ [Z= Si, Sn and Ge] half-Heusler compounds ferromagnets | |
| Li et al. | Obtaining half-metallic ferrimagnetism and antiferromagnetism by doping Mn and Fe for DO3-type Heusler compound Cr3Si | |
| CN105405968A (zh) | 一种调整半金属磁体电子能带结构的方法及其产物 | |
| Felser et al. | Basics and prospectives of magnetic Heusler compounds | |
| Rai et al. | A density functional theory study of half-metallic ferromagnets (HMFs) behavior in Co2YSb (Y= Sc, Ti) | |
| Takeshita et al. | Crystal Structure and Magnetic Properties of RCu 4 Ag (R= Rare Earth) Intermetallic Compounds | |
| GB1106314A (en) | Semiconductor crystal of fibre-like structure | |
| Adams | Recent developments in soft magnetic alloys | |
| Shirai et al. | Materials design of Cr-based half-metallic ferromagnets | |
| Mitani | Magnetic tunnel junctions using heusler alloys | |
| Dahmane et al. | Band Structure Simulations of the Structural, Electronic, Magnetic, and Half-Metallic Features of the Ti 2 CoAl1− x Sn x (x= 0, 0.25, 0.50, 0.75, 1) Heusler Alloys | |
| Iyorzor et al. | Structural, mechanical, electronic, and magnetic properties of LiO in cesium chloride, rocksalt and zinc-blende structures |