GB1045478A - Apparatus exhibiting stimulated emission of radiation b - Google Patents
Apparatus exhibiting stimulated emission of radiation bInfo
- Publication number
- GB1045478A GB1045478A GB40363/63A GB4036363A GB1045478A GB 1045478 A GB1045478 A GB 1045478A GB 40363/63 A GB40363/63 A GB 40363/63A GB 4036363 A GB4036363 A GB 4036363A GB 1045478 A GB1045478 A GB 1045478A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- junction
- gold
- washer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 230000001747 exhibiting effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- 229910005542 GaSb Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US230607A US3265990A (en) | 1962-10-15 | 1962-10-15 | Stimulated emission of radiation in semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1045478A true GB1045478A (en) | 1966-10-12 |
Family
ID=22865868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB40363/63A Expired GB1045478A (en) | 1962-10-15 | 1963-10-14 | Apparatus exhibiting stimulated emission of radiation b |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3265990A (en:Method) |
| BE (1) | BE639434A (en:Method) |
| CH (1) | CH414027A (en:Method) |
| DE (1) | DE1183599B (en:Method) |
| FR (1) | FR1383866A (en:Method) |
| GB (1) | GB1045478A (en:Method) |
| NL (1) | NL299168A (en:Method) |
| SE (1) | SE315348B (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3412344A (en) * | 1963-10-30 | 1968-11-19 | Rca Corp | Semiconductor plasma laser |
| US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
| DE1489517A1 (de) * | 1965-07-07 | 1969-05-14 | Siemens Ag | Lumineszenzdiode mit einem A?-Halbleiter-Einkristall und einem durch Legieren hergestellten ebenen pn-UEbergang |
| US3529200A (en) * | 1968-03-28 | 1970-09-15 | Gen Electric | Light-emitting phosphor-diode combination |
| DE3009192C2 (de) * | 1980-03-11 | 1984-05-10 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Überlastschutzanordnung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE970869C (de) * | 1954-09-29 | 1958-11-06 | Patra Patent Treuhand | Leuchtstoffe fuer Elektrolumineszenzlampen |
| DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
| DE1248826B (en:Method) * | 1958-04-30 | |||
| USRE25632E (en) * | 1960-01-11 | 1964-08-18 | Optical maser |
-
0
- BE BE639434D patent/BE639434A/xx unknown
- NL NL299168D patent/NL299168A/xx unknown
-
1962
- 1962-10-15 US US230607A patent/US3265990A/en not_active Expired - Lifetime
-
1963
- 1963-10-14 GB GB40363/63A patent/GB1045478A/en not_active Expired
- 1963-10-15 DE DEJ24565A patent/DE1183599B/de active Pending
- 1963-10-15 CH CH1265363A patent/CH414027A/de unknown
- 1963-10-15 FR FR950667A patent/FR1383866A/fr not_active Expired
- 1963-10-15 SE SE11300/63A patent/SE315348B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE639434A (en:Method) | |
| DE1183599B (de) | 1964-12-17 |
| CH414027A (de) | 1966-05-31 |
| SE315348B (en:Method) | 1969-09-29 |
| NL299168A (en:Method) | |
| FR1383866A (fr) | 1965-01-04 |
| US3265990A (en) | 1966-08-09 |
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