GB1036341A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1036341A
GB1036341A GB318264A GB318264A GB1036341A GB 1036341 A GB1036341 A GB 1036341A GB 318264 A GB318264 A GB 318264A GB 318264 A GB318264 A GB 318264A GB 1036341 A GB1036341 A GB 1036341A
Authority
GB
United Kingdom
Prior art keywords
substrate
impurity
vapour
concentration
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB318264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1036341A publication Critical patent/GB1036341A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,036,341. Semi-conductor devices. TEXAS INSTRUMENTS Inc. Jan. 24, 1964 [Feb. 6, 1963], No. 3182/64. Heading H1K. A semi-conductor substrate has a further layer epitaxially deposited thereon from the vapour phase, the substrate and the layer containing respective impurities of the same conductivity type but different concentrations, the one containing the greater impurity concentration also containing a further impurity of intermediate concentration and opposite conductivity type and of substantially greater diffusion coefficient than the impurity of greater concentration, and the two impurities of greater and intermediate concentrations are simultaneously diffused across the boundary between the substrate and the epitaxial layer to form two PN junctions. In one example as shown, in the production of an NPN transistor, a monocrystalline silicon wafer 4 doped with boron and more heavily with arsenic is placed on an electrically heated graphite platform 18 in a quartz tube 8 and heated to 1000-1300‹ C. in a stream of vapour containing hydrogen, phosphene, and silicon tetrachloride. If necessary, diffusion of the boron and arsenic into the epitaxial layer so formed may be completed under further heating without the vapour.
GB318264A 1963-02-06 1964-01-24 Semiconductor device Expired GB1036341A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25659563A 1963-02-06 1963-02-06

Publications (1)

Publication Number Publication Date
GB1036341A true GB1036341A (en) 1966-07-20

Family

ID=22972833

Family Applications (1)

Application Number Title Priority Date Filing Date
GB318264A Expired GB1036341A (en) 1963-02-06 1964-01-24 Semiconductor device

Country Status (1)

Country Link
GB (1) GB1036341A (en)

Similar Documents

Publication Publication Date Title
US3412460A (en) Method of making complementary transistor structure
GB1050478A (en)
GB1116209A (en) Improvements in semiconductor structures
GB1198569A (en) Semiconductor Junction Device.
GB1277501A (en) Variable capacitance diode fabrication
GB966257A (en) Improvements in or relating to methods of producing p-n junctions
GB1146943A (en) Semiconductor device
GB1100780A (en) Improvements in or relating to the diffusion of doping substances into semiconductor crystals
GB1024359A (en) Semiconductor structures poviding both unipolar transistor and bipolar transistor functions and method of making same
GB1326286A (en) Transistors
GB936832A (en) Improvements relating to the production of p.n. junctions in semi-conductor material
GB1209543A (en) Improvements in or relating to semiconductor devices
GB1217472A (en) Integrated circuits
GB1036341A (en) Semiconductor device
GB848226A (en) Method for producing junctions in semiconductor device
GB1127161A (en) Improvements in or relating to diffused base transistors
GB853029A (en) Improvements in and relating to semi-conductor devices
GB1160267A (en) Improvements in or relating to Semiconductor Devices
GB1232727A (en)
GB1279735A (en) Semiconductor device and fabrication of same
GB1028485A (en) Semiconductor devices
GB967069A (en) Semiconductor junctions having a retrograde distribution of impurities
GB1260567A (en) Improvements in or relating to semiconductor devices
GB1049408A (en) Improvements in or relating to methods of producing pn-junctions
GB986403A (en) Method of forming p-n junctions