GB1028767A - Semi-conductor devices and their manufacture - Google Patents

Semi-conductor devices and their manufacture

Info

Publication number
GB1028767A
GB1028767A GB41189/62A GB4118962A GB1028767A GB 1028767 A GB1028767 A GB 1028767A GB 41189/62 A GB41189/62 A GB 41189/62A GB 4118962 A GB4118962 A GB 4118962A GB 1028767 A GB1028767 A GB 1028767A
Authority
GB
United Kingdom
Prior art keywords
junction
region
crystal
type
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41189/62A
Other languages
English (en)
Inventor
William Brian Glass
Arthur Langridge
Henry William Grimwood
Brian Anthony Hegarty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE639315D priority Critical patent/BE639315A/xx
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB41189/62A priority patent/GB1028767A/en
Priority to US315843A priority patent/US3354003A/en
Priority to FR950746A priority patent/FR1379745A/fr
Priority to DE19631439954 priority patent/DE1439954C3/de
Publication of GB1028767A publication Critical patent/GB1028767A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB41189/62A 1962-10-31 1962-10-31 Semi-conductor devices and their manufacture Expired GB1028767A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE639315D BE639315A (https=) 1962-10-31
GB41189/62A GB1028767A (en) 1962-10-31 1962-10-31 Semi-conductor devices and their manufacture
US315843A US3354003A (en) 1962-10-31 1963-10-14 Semi-conductor junction with a depletion layer
FR950746A FR1379745A (fr) 1962-10-31 1963-10-16 élément à jonction à conductibilité asymétrique et son procédé de fabrication
DE19631439954 DE1439954C3 (de) 1962-10-31 1963-10-17 Halbleiterbauelement für Halbleitergleichrichter und Verfahren zum Herstellen

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB41189/62A GB1028767A (en) 1962-10-31 1962-10-31 Semi-conductor devices and their manufacture
GB1142063 1963-03-22
GB1594563 1963-04-23
GB3034263 1963-07-31

Publications (1)

Publication Number Publication Date
GB1028767A true GB1028767A (en) 1966-05-11

Family

ID=27448106

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41189/62A Expired GB1028767A (en) 1962-10-31 1962-10-31 Semi-conductor devices and their manufacture

Country Status (3)

Country Link
US (1) US3354003A (https=)
BE (1) BE639315A (https=)
GB (1) GB1028767A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457469A (en) * 1965-11-15 1969-07-22 Motorola Inc Noise diode having an alloy zener junction
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419237A (en) * 1945-01-18 1947-04-22 Bell Telephone Labor Inc Translating material and device and method of making them
NL207969A (https=) * 1955-06-28
US3051877A (en) * 1955-12-29 1962-08-28 Honeywell Regulator Co Semiconductor devices
US2975344A (en) * 1959-05-28 1961-03-14 Tung Sol Electric Inc Semiconductor field effect device
NL249694A (https=) * 1959-12-30
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
US3203840A (en) * 1961-12-14 1965-08-31 Texas Insutruments Inc Diffusion method
NL302804A (https=) * 1962-08-23 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Also Published As

Publication number Publication date
DE1439954A1 (de) 1970-08-20
US3354003A (en) 1967-11-21
BE639315A (https=)
DE1439954B2 (de) 1976-01-22

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