GB1021783A - Semiconductive devices - Google Patents

Semiconductive devices

Info

Publication number
GB1021783A
GB1021783A GB248064A GB248064A GB1021783A GB 1021783 A GB1021783 A GB 1021783A GB 248064 A GB248064 A GB 248064A GB 248064 A GB248064 A GB 248064A GB 1021783 A GB1021783 A GB 1021783A
Authority
GB
United Kingdom
Prior art keywords
jan
deposited
epitaxial layer
gallium arsenide
semiconductive devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB248064A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1021783A publication Critical patent/GB1021783A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,021,783. Semi-conductordevices. RADIO CORPORATION OF AMERICA. Jan. 20, 1964 [Jan. 31, 1963], No. 2480/64. Heading H1K. A crystalline gallium arsenide body has an epitaxial layer, of the same or opposite conductivity type, deposited on a major face which is substantially parallel to a (100) crystallographic plane of the body. The epitaxial layer may be deposited from a melt comprising a solvent metal saturated with gallium arsenide or by passing vapours of gallium chloride, arsenic and hydrogen over the heated body.
GB248064A 1963-01-31 1964-01-20 Semiconductive devices Expired GB1021783A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25535363A 1963-01-31 1963-01-31

Publications (1)

Publication Number Publication Date
GB1021783A true GB1021783A (en) 1966-03-09

Family

ID=22967930

Family Applications (1)

Application Number Title Priority Date Filing Date
GB248064A Expired GB1021783A (en) 1963-01-31 1964-01-20 Semiconductive devices

Country Status (4)

Country Link
BE (1) BE643082A (en)
DE (1) DE1241915B (en)
GB (1) GB1021783A (en)
NL (1) NL6400755A (en)

Also Published As

Publication number Publication date
DE1241915B (en) 1967-06-08
NL6400755A (en) 1964-08-03
BE643082A (en) 1964-05-15

Similar Documents

Publication Publication Date Title
GB1021756A (en) Thermoelectric device
GB1026019A (en) Improvements in or relating to semiconductor devices
GB987169A (en) Improvements relating to semi-conductor controlled rectifiers
GB1125650A (en) Insulating layers and devices incorporating such layers
BE617733A (en) Epitaxial growth of binary semiconductors
GB1021783A (en) Semiconductive devices
SE306346B (en)
GB951072A (en) Improvements relating to radiation detectors
AKHMEDLI et al. Investigation of the thermal conductivity of alloyed gallium arsenide(Thermal conductivity of n and p type alloyed gallium arsenide over wide range of carrier concentrations)
BAUER et al. Atmospheric ionic composition determination, electron temperatures, and solar activity experiments from explorer viii satellite
SOCIO Problems concerning communications and tracking of spacecraft in the atmosphere, due to interference from the ionized layer surrounding the vehicle
AU262256B2 (en) A circuit arrangement for supplying substantially constant current toa load, over a wide range of alternator speeds
GB1076564A (en) Ion producing device
AU273168B2 (en) Production of single crystal compounds epitaxial films of said compounds, and semiconductor devices utilizing said compounds
TRICHE Influence of plasma composition on spectral-line intensity
HORIE Dispersion relation for plasma modes is obtained by derivation of the microscopic expression for the dielectric constant and is extended to the exciton problem
LIUBIMOV Magnetohydrodynamic boundary layer on a plate acting as a dielectric for small values of electromagnetic interactions
CA612493A (en) Process for recovering gallium
DROFA et al. Limb zone of the moon- new soviet study
CA627864A (en) Carrier for agricultural machinery
RAO Characteristic rise in the critical frequency for the f-2 region, apparently controlled by solar activity and dependent on the height of the f-2 layer
LEBEDEV et al. Method for solving the problems of electromagnetic wave diffraction on a wedge of finite conductivity using an integral transformation
LAYZER A theory of mid-latitude sporadic E(Midlatitude sporadic E layer and relation to electron density and atmospheric ionization)
AU254454B2 (en) Recovery of gallium from gallium-containing solutions
KOGA Effect of the temperature of a fully-ionized plasma on its conductivity to a radio wave