GB1021577A - Semi-conductor device with negative resistance characteristics at extreme low temperatures - Google Patents

Semi-conductor device with negative resistance characteristics at extreme low temperatures

Info

Publication number
GB1021577A
GB1021577A GB10900/63A GB1090063A GB1021577A GB 1021577 A GB1021577 A GB 1021577A GB 10900/63 A GB10900/63 A GB 10900/63A GB 1090063 A GB1090063 A GB 1090063A GB 1021577 A GB1021577 A GB 1021577A
Authority
GB
United Kingdom
Prior art keywords
deep trap
trap level
curve
donor
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10900/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1021577A publication Critical patent/GB1021577A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
GB10900/63A 1962-03-24 1963-03-19 Semi-conductor device with negative resistance characteristics at extreme low temperatures Expired GB1021577A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1182062 1962-03-24

Publications (1)

Publication Number Publication Date
GB1021577A true GB1021577A (en) 1966-03-02

Family

ID=11788406

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10900/63A Expired GB1021577A (en) 1962-03-24 1963-03-19 Semi-conductor device with negative resistance characteristics at extreme low temperatures

Country Status (5)

Country Link
US (1) US3310502A (forum.php)
DE (1) DE1214340C2 (forum.php)
FR (1) FR1352381A (forum.php)
GB (1) GB1021577A (forum.php)
NL (1) NL290498A (forum.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249764A (en) 1963-05-31 1966-05-03 Gen Electric Forward biased negative resistance semiconductor devices
NL6401302A (forum.php) * 1964-02-14 1965-08-16
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Industrial Co Ltd Transducer
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector
US3491325A (en) * 1967-02-15 1970-01-20 Ibm Temperature compensation for semiconductor devices
US3611068A (en) * 1970-05-20 1971-10-05 Matsushita Electric Industrial Co Ltd Contactless pressure sensitive semiconductor switch
JPS5651751A (en) * 1979-10-04 1981-05-09 Canon Inc Electrophotographic receptor
US4856330A (en) * 1986-04-17 1989-08-15 Honda Engineering Co., Ltd. Fluid speed or direction measuring apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US3109760A (en) * 1960-02-15 1963-11-05 Cievite Corp P-nu junction and method

Also Published As

Publication number Publication date
FR1352381A (fr) 1964-02-14
DE1214340C2 (de) 1966-10-20
DE1214340B (de) 1966-04-14
US3310502A (en) 1967-03-21
NL290498A (forum.php)

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