FR1352381A - Dispositif semi-conducteur présentant des caractéristiques à résistance négative à des températures extrêmement basses - Google Patents

Dispositif semi-conducteur présentant des caractéristiques à résistance négative à des températures extrêmement basses

Info

Publication number
FR1352381A
FR1352381A FR928945A FR928945A FR1352381A FR 1352381 A FR1352381 A FR 1352381A FR 928945 A FR928945 A FR 928945A FR 928945 A FR928945 A FR 928945A FR 1352381 A FR1352381 A FR 1352381A
Authority
FR
France
Prior art keywords
semiconductor device
extremely low
low temperatures
resistance characteristics
negative resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR928945A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of FR1352381A publication Critical patent/FR1352381A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR928945A 1962-03-24 1963-03-22 Dispositif semi-conducteur présentant des caractéristiques à résistance négative à des températures extrêmement basses Expired FR1352381A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1182062 1962-03-24

Publications (1)

Publication Number Publication Date
FR1352381A true FR1352381A (fr) 1964-02-14

Family

ID=11788406

Family Applications (1)

Application Number Title Priority Date Filing Date
FR928945A Expired FR1352381A (fr) 1962-03-24 1963-03-22 Dispositif semi-conducteur présentant des caractéristiques à résistance négative à des températures extrêmement basses

Country Status (5)

Country Link
US (1) US3310502A (fr)
DE (1) DE1214340C2 (fr)
FR (1) FR1352381A (fr)
GB (1) GB1021577A (fr)
NL (1) NL290498A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Ind Co Ltd Transducer
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector
US3491325A (en) * 1967-02-15 1970-01-20 Ibm Temperature compensation for semiconductor devices
US3611068A (en) * 1970-05-20 1971-10-05 Matsushita Electric Ind Co Ltd Contactless pressure sensitive semiconductor switch
JPS5651751A (en) * 1979-10-04 1981-05-09 Canon Inc Electrophotographic receptor
US4856330A (en) * 1986-04-17 1989-08-15 Honda Engineering Co., Ltd. Fluid speed or direction measuring apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US3109760A (en) * 1960-02-15 1963-11-05 Cievite Corp P-nu junction and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device

Also Published As

Publication number Publication date
DE1214340C2 (de) 1966-10-20
US3310502A (en) 1967-03-21
DE1214340B (de) 1966-04-14
NL290498A (fr)
GB1021577A (en) 1966-03-02

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