GB1015985A - Semiconductor materials and applications thereof - Google Patents

Semiconductor materials and applications thereof

Info

Publication number
GB1015985A
GB1015985A GB22580/62A GB2258062A GB1015985A GB 1015985 A GB1015985 A GB 1015985A GB 22580/62 A GB22580/62 A GB 22580/62A GB 2258062 A GB2258062 A GB 2258062A GB 1015985 A GB1015985 A GB 1015985A
Authority
GB
United Kingdom
Prior art keywords
per cent
carbon
boron
compositions
weight per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22580/62A
Inventor
Darrel Melvin Harris
Courtland Matson Henderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Priority to GB22580/62A priority Critical patent/GB1015985A/en
Publication of GB1015985A publication Critical patent/GB1015985A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The Specification relates to the use in semiconductor devices of various boron-carbon and boron-carbon-based compositions. It describes their use in thermo-electric elements, thermistors, point-contact rectifiers, and frequency sensitive capacitors. These compositions contain 6.5 - 17 weight per cent carbon and may contain one or more additional elements selected from all parts of the Periodic Table with the exception of the halogens and the rare gases. Table I in the Specification sets out many additives and the proportions in which they may be used. The lower limit for the additives is 10-13 weight per cent; the upper limit, which varies slightly with the nature of the additive, is never more than 25 weight per cent for a single additive or more than 48 weight per cent for combinations of additives. The compositions may be formed by hot-pressing mixtures of the powdered elements. Decomposition of a mixture of an alkyl boron compound with or without diborane or a boron trihalide will also yield carbon boron mixtures of the required proportions, additional elements such as aluminium, titanium, iron, germanium, and silicon being incorporated by co-deposition of their hydrides or halides. Specific compositions disclosed are: (1) 93.49% B, 6.5% C, 0.01% Ge; (2) 89.9% B, 10% C, 0.1% Si; (3) 88.75% B, 11% C, 0.2% Si, 0.05% Ti; (4) 88% B, 10% C, 2% Ce; (5) 86% B, 7% C, 7% Be; (6) 85.6% B, 12% C, 1.5% Ti, 0.9% Si; (7) 85% B, 15% C; and (8) 83% B, 12% C, 5% Ge. Three compositions are disclosed in which the value of the carbon content within the range 6.5 - 17% is not specified but which contain respectively 0.0001 atom per cent Be, 0.00001 atom per cent Si, and 0.001 weight per cent Mn.ALSO:Air or another oxygen source and a stream of liquid white phosphorus are fed into a furnace for the production of phosphoric anhydride. The hot exit gas stream containing the phosphoric anhydride is cooled by passing it over a surface containing thermoelectric elements consisting of carbon-boron or carbon-boron-base compositions containing 6.5-17 wt. per cent carbon. The furnace described has four thermoelectric units connected in series so that the heat absorbed gives a useful electrical output such as that required for a motor or a resistive load. Alternatively power may be fed into the thermoelectric elements of the phosphorus burner or similar furnace so that with one direction of current flow the units act as a Peltier cooler and with the opposite direction of current flow the junctions in contact with the gas-stream provide heat to initiate a reaction.
GB22580/62A 1962-06-12 1962-06-12 Semiconductor materials and applications thereof Expired GB1015985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB22580/62A GB1015985A (en) 1962-06-12 1962-06-12 Semiconductor materials and applications thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22580/62A GB1015985A (en) 1962-06-12 1962-06-12 Semiconductor materials and applications thereof

Publications (1)

Publication Number Publication Date
GB1015985A true GB1015985A (en) 1966-01-05

Family

ID=10181714

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22580/62A Expired GB1015985A (en) 1962-06-12 1962-06-12 Semiconductor materials and applications thereof

Country Status (1)

Country Link
GB (1) GB1015985A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288022A2 (en) * 1987-04-22 1988-10-26 Sharp Kabushiki Kaisha Superconductive apparatus
US5130691A (en) * 1988-10-05 1992-07-14 Sharp Kabushiki Kaisha Superconductive apparatus having a superconductive device in a airtight package
WO2003017389A2 (en) * 2001-08-13 2003-02-27 Motorola, Inc. High performance thermoelectric material
EP1289026A2 (en) * 2001-08-31 2003-03-05 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288022A2 (en) * 1987-04-22 1988-10-26 Sharp Kabushiki Kaisha Superconductive apparatus
EP0288022A3 (en) * 1987-04-22 1990-04-04 Sharp Kabushiki Kaisha Superconductive apparatus
US5166777A (en) * 1987-04-22 1992-11-24 Sharp Kabushiki Kaisha Cooling apparatus for superconducting devices using Peltier effect cooling element
US5130691A (en) * 1988-10-05 1992-07-14 Sharp Kabushiki Kaisha Superconductive apparatus having a superconductive device in a airtight package
WO2003017389A2 (en) * 2001-08-13 2003-02-27 Motorola, Inc. High performance thermoelectric material
WO2003017389A3 (en) * 2001-08-13 2003-04-10 Motorola Inc High performance thermoelectric material
US6677515B2 (en) 2001-08-13 2004-01-13 Motorola, Inc. High performance thermoelectric material and method of fabrication
EP1289026A2 (en) * 2001-08-31 2003-03-05 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them
EP1289026A3 (en) * 2001-08-31 2004-04-21 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them

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