GB1015985A - Semiconductor materials and applications thereof - Google Patents
Semiconductor materials and applications thereofInfo
- Publication number
- GB1015985A GB1015985A GB22580/62A GB2258062A GB1015985A GB 1015985 A GB1015985 A GB 1015985A GB 22580/62 A GB22580/62 A GB 22580/62A GB 2258062 A GB2258062 A GB 2258062A GB 1015985 A GB1015985 A GB 1015985A
- Authority
- GB
- United Kingdom
- Prior art keywords
- per cent
- carbon
- boron
- compositions
- weight per
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The Specification relates to the use in semiconductor devices of various boron-carbon and boron-carbon-based compositions. It describes their use in thermo-electric elements, thermistors, point-contact rectifiers, and frequency sensitive capacitors. These compositions contain 6.5 - 17 weight per cent carbon and may contain one or more additional elements selected from all parts of the Periodic Table with the exception of the halogens and the rare gases. Table I in the Specification sets out many additives and the proportions in which they may be used. The lower limit for the additives is 10-13 weight per cent; the upper limit, which varies slightly with the nature of the additive, is never more than 25 weight per cent for a single additive or more than 48 weight per cent for combinations of additives. The compositions may be formed by hot-pressing mixtures of the powdered elements. Decomposition of a mixture of an alkyl boron compound with or without diborane or a boron trihalide will also yield carbon boron mixtures of the required proportions, additional elements such as aluminium, titanium, iron, germanium, and silicon being incorporated by co-deposition of their hydrides or halides. Specific compositions disclosed are: (1) 93.49% B, 6.5% C, 0.01% Ge; (2) 89.9% B, 10% C, 0.1% Si; (3) 88.75% B, 11% C, 0.2% Si, 0.05% Ti; (4) 88% B, 10% C, 2% Ce; (5) 86% B, 7% C, 7% Be; (6) 85.6% B, 12% C, 1.5% Ti, 0.9% Si; (7) 85% B, 15% C; and (8) 83% B, 12% C, 5% Ge. Three compositions are disclosed in which the value of the carbon content within the range 6.5 - 17% is not specified but which contain respectively 0.0001 atom per cent Be, 0.00001 atom per cent Si, and 0.001 weight per cent Mn.ALSO:Air or another oxygen source and a stream of liquid white phosphorus are fed into a furnace for the production of phosphoric anhydride. The hot exit gas stream containing the phosphoric anhydride is cooled by passing it over a surface containing thermoelectric elements consisting of carbon-boron or carbon-boron-base compositions containing 6.5-17 wt. per cent carbon. The furnace described has four thermoelectric units connected in series so that the heat absorbed gives a useful electrical output such as that required for a motor or a resistive load. Alternatively power may be fed into the thermoelectric elements of the phosphorus burner or similar furnace so that with one direction of current flow the units act as a Peltier cooler and with the opposite direction of current flow the junctions in contact with the gas-stream provide heat to initiate a reaction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB22580/62A GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB22580/62A GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1015985A true GB1015985A (en) | 1966-01-05 |
Family
ID=10181714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB22580/62A Expired GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1015985A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0288022A2 (en) * | 1987-04-22 | 1988-10-26 | Sharp Kabushiki Kaisha | Superconductive apparatus |
US5130691A (en) * | 1988-10-05 | 1992-07-14 | Sharp Kabushiki Kaisha | Superconductive apparatus having a superconductive device in a airtight package |
WO2003017389A2 (en) * | 2001-08-13 | 2003-02-27 | Motorola, Inc. | High performance thermoelectric material |
EP1289026A2 (en) * | 2001-08-31 | 2003-03-05 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
-
1962
- 1962-06-12 GB GB22580/62A patent/GB1015985A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0288022A2 (en) * | 1987-04-22 | 1988-10-26 | Sharp Kabushiki Kaisha | Superconductive apparatus |
EP0288022A3 (en) * | 1987-04-22 | 1990-04-04 | Sharp Kabushiki Kaisha | Superconductive apparatus |
US5166777A (en) * | 1987-04-22 | 1992-11-24 | Sharp Kabushiki Kaisha | Cooling apparatus for superconducting devices using Peltier effect cooling element |
US5130691A (en) * | 1988-10-05 | 1992-07-14 | Sharp Kabushiki Kaisha | Superconductive apparatus having a superconductive device in a airtight package |
WO2003017389A2 (en) * | 2001-08-13 | 2003-02-27 | Motorola, Inc. | High performance thermoelectric material |
WO2003017389A3 (en) * | 2001-08-13 | 2003-04-10 | Motorola Inc | High performance thermoelectric material |
US6677515B2 (en) | 2001-08-13 | 2004-01-13 | Motorola, Inc. | High performance thermoelectric material and method of fabrication |
EP1289026A2 (en) * | 2001-08-31 | 2003-03-05 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
EP1289026A3 (en) * | 2001-08-31 | 2004-04-21 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
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