GB1013465A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1013465A
GB1013465A GB6259/63A GB625963A GB1013465A GB 1013465 A GB1013465 A GB 1013465A GB 6259/63 A GB6259/63 A GB 6259/63A GB 625963 A GB625963 A GB 625963A GB 1013465 A GB1013465 A GB 1013465A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon
diffused
boron
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6259/63A
Other languages
English (en)
Inventor
Henley Frank Sterling
Cyril Francis Drake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB6259/63A priority Critical patent/GB1013465A/en
Priority to NL302325D priority patent/NL302325A/xx
Priority to DE1964ST021687 priority patent/DE1207510C2/de
Priority to CH172064A priority patent/CH419352A/de
Priority to FR963771A priority patent/FR1382625A/fr
Priority to BE643788D priority patent/BE643788A/xx
Publication of GB1013465A publication Critical patent/GB1013465A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
GB6259/63A 1963-02-15 1963-02-15 Improvements in or relating to semiconductor devices Expired GB1013465A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB6259/63A GB1013465A (en) 1963-02-15 1963-02-15 Improvements in or relating to semiconductor devices
NL302325D NL302325A (enExample) 1963-02-15 1963-12-20
DE1964ST021687 DE1207510C2 (de) 1963-02-15 1964-02-13 Verfahren zum herstellen eines durchschlagsunempfindlichen halbleitergleichrichters
CH172064A CH419352A (de) 1963-02-15 1964-02-13 Halbleitervorrichtung
FR963771A FR1382625A (fr) 1963-02-15 1964-02-14 Perfectionnements aux méthodes de fabrication de dispositifs semi-conducteurs à jonction
BE643788D BE643788A (enExample) 1963-02-15 1964-02-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6259/63A GB1013465A (en) 1963-02-15 1963-02-15 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1013465A true GB1013465A (en) 1965-12-15

Family

ID=9811272

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6259/63A Expired GB1013465A (en) 1963-02-15 1963-02-15 Improvements in or relating to semiconductor devices

Country Status (2)

Country Link
BE (1) BE643788A (enExample)
GB (1) GB1013465A (enExample)

Also Published As

Publication number Publication date
BE643788A (enExample) 1964-08-14

Similar Documents

Publication Publication Date Title
GB1116209A (en) Improvements in semiconductor structures
GB1105177A (en) Improvements in semiconductor devices
GB1153428A (en) Improvements in Semiconductor Devices.
US3532945A (en) Semiconductor devices having a low capacitance junction
GB923513A (en) Improvements in semiconductor devices
GB1012123A (en) Improvements in or relating to semiconductor devices
GB1003131A (en) Semiconductor devices and their fabrication
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB998388A (en) Improvements in or relating to semiconductor junction devices
GB949646A (en) Improvements in or relating to semiconductor devices
GB1215539A (en) Hybrid junction semiconductor device and method of making the same
GB1334745A (en) Semiconductor devices
FR1489613A (enExample)
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
GB1194752A (en) Transistor
GB1013465A (en) Improvements in or relating to semiconductor devices
US3530015A (en) Method of producing gallium arsenide devices
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1071294A (en) Improvements in and relating to the manufacture of transistors
US3573113A (en) Method of preparing a p-n junction
GB1260567A (en) Improvements in or relating to semiconductor devices
GB1063210A (en) Method of producing semiconductor devices
GB1110321A (en) Improvements in or relating to semiconductor devices
GB1048424A (en) Improvements in or relating to semiconductor devices