GB1008714A - Improvements in or relating to the short period control of transistors employed in switching circuits - Google Patents

Improvements in or relating to the short period control of transistors employed in switching circuits

Info

Publication number
GB1008714A
GB1008714A GB136961A GB136961A GB1008714A GB 1008714 A GB1008714 A GB 1008714A GB 136961 A GB136961 A GB 136961A GB 136961 A GB136961 A GB 136961A GB 1008714 A GB1008714 A GB 1008714A
Authority
GB
United Kingdom
Prior art keywords
transistor
current
turn
pulse
pulses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB136961A
Inventor
Philip Martin Thompson
Robert John Miles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB136961A priority Critical patent/GB1008714A/en
Publication of GB1008714A publication Critical patent/GB1008714A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

1,008,714. Transistor pulse circuits. PLESSEY CO. Ltd. Jan. 10, 1962 [Jan. 12, 1961], No. 1369/61. Heading H3T. In a high-speed switching circuit, charge storage effects are minimized by driving the heavy duty transistor from a current step-up transformer supplied with turn-on and turn-off current pulses of a magnitude similar to that of the collector current of the heavy duty transistor, by means of at least one further low-duty transistor. Fig. 3 shows a drive circuit for a specified switching transistor 1 having low saturation resistance and an alpha cut-off frequency of 12 Mc/s. Fig. 2 shows the base current necessary to produce a rectangular collector current pulse. The turn-on current pulse a and turn-off current pulse c are respectively provided by gating the output of a constant current source 12 by means of lowpowered switching transistors 8, 9 and coupling the pulses by means of a current transformer 2 to the base of transistor 1. The amplitude of pulse a should be greater than is required to turn on transistor 1 so that carrier storage can be used to provide the maintaining portion b. A diode 10 and resistor 11 are provided to dissipate the excess of turn-off pulses. Transistor 1 may be used to drive a fast magnetic data store.
GB136961A 1961-01-12 1961-01-12 Improvements in or relating to the short period control of transistors employed in switching circuits Expired GB1008714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB136961A GB1008714A (en) 1961-01-12 1961-01-12 Improvements in or relating to the short period control of transistors employed in switching circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB136961A GB1008714A (en) 1961-01-12 1961-01-12 Improvements in or relating to the short period control of transistors employed in switching circuits

Publications (1)

Publication Number Publication Date
GB1008714A true GB1008714A (en) 1965-11-03

Family

ID=9720827

Family Applications (1)

Application Number Title Priority Date Filing Date
GB136961A Expired GB1008714A (en) 1961-01-12 1961-01-12 Improvements in or relating to the short period control of transistors employed in switching circuits

Country Status (1)

Country Link
GB (1) GB1008714A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571623A (en) * 1967-12-26 1971-03-23 Ibm Transistorized switching circuit and driver means therefor
EP0084555A1 (en) * 1981-08-06 1983-08-03 Gould Inc High speed transistor switching circuit.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571623A (en) * 1967-12-26 1971-03-23 Ibm Transistorized switching circuit and driver means therefor
EP0084555A1 (en) * 1981-08-06 1983-08-03 Gould Inc High speed transistor switching circuit.
EP0084555A4 (en) * 1981-08-06 1984-09-28 Gould Inc High speed transistor switching circuit.

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