GB1001144A - Production of inorganic compounds containing elements from groups iiib and vb of the periodic table - Google Patents

Production of inorganic compounds containing elements from groups iiib and vb of the periodic table

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Publication number
GB1001144A
GB1001144A GB2015662A GB2015662A GB1001144A GB 1001144 A GB1001144 A GB 1001144A GB 2015662 A GB2015662 A GB 2015662A GB 2015662 A GB2015662 A GB 2015662A GB 1001144 A GB1001144 A GB 1001144A
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GB
United Kingdom
Prior art keywords
compounds
group
fraction
mol
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2015662A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1001144A publication Critical patent/GB1001144A/en
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)

Abstract

Aiii Bv compounds are prepared by reaction in the gaseous phase, e.g. at a pressure of 0.1 micron to 7,500 mm. Hg., of a volatile compound of an element of Group IIIb having an atomic number of at least 13, with an element or mixture of elements of Group Vb and hydrogen, at e.g. 600-1300 DEG C. and in the absence of oxidizing gases. The volatile compound of Group IIIb which may be present in mol fraction 0.01-0.15, may be a halide, alkyl or alkyl halide while the element of Group Vb may be present in quantities 0.05-0.50 mol fraction. The mol fraction of the Group Vb element is at least equal to the mol fraction of the compound of Group IIIb but preferably greater, e.g. double. The Aiii Bv compounds may be the nitrides, phosphides, arsenides and antimonides of Al, Ga and In but bismuthides and Tl compounds may also be made. Ternary and quaternary compounds such as GaAsxP1- x and GayIn1- yAsxP1- x are also possible where x and y are 1-0. Compounds of specified conductivity type and resistivity may be made by using ultra pure starting materials and adding to these or the hydrogen stream, trace amounts of impurities e.g. 1015 to 5.1020 atoms impurity per c.c. of product, such as Be, Mg, Zn, Cd, Hg, or compounds thereof for p-type conductivity or S, Se, Te, Sn, or SnCl4 for n-type conductivity. In specific embodiments GaP, InAs, AlAs, InP, Zn-doped GaAs, Sn-doped AlSb, Zn-doped GaPAs, Te-doped GaIn-AsP.ALSO:AIIIBV compounds are prepared by reaction in the gaseous phase, e.g. at a pressure of 0.1 micron to 7500 mm. Hg, of a volatile compound of an element of Group 111B having an atomic member of at least 13, with an element or mixture of elements of Group VB and hydrogen, at, e.g., 600-1300 DEG C. and in the absence of oxidizing gases. The volatile compound of Group 111B which may be present in mol. fraction 0.01 to 0.15, may be a halide, alkyl or alkyl halide while the element of Group VB may be present in quantities 0.05 to 0.50 mol. fraction. The mol. fraction of the Group VB element is at least equal to the mol. fraction of the compound of Group 111B but preferably greater, e.g. double. The AIIIBV compounds may be the nitrides, phosphides, arsenides and antimonides of Al, Ga and In but bismuthides and Tl compounds may also be made. Ternary and quaternary compounds such as GaAsxP1- x and GayIn1- yAsxP1- x are also possible where x and y are 1 to 0. Compounds of specified conductivity type and resistivity may be made by using ultra pure starting materials and adding to these or the hydrogen stream, trace amounts of impurities, e.g. 1015 to 5.1020 atoms impurity per c.c. of product, such as Be, Mg, Zn, Cd, Hg or compounds thereof for P-type conductivity or S, Se, Te, Sn, or SnCl4 for N-type conductivity. In specific embodiments GaP, InAs, AlAs, InP, Zn-doped GaAs, Sn-doped AlSb, Zn-doped GaPAs, Te-doped GaInAsP.
GB2015662A 1961-05-26 1962-05-25 Production of inorganic compounds containing elements from groups iiib and vb of the periodic table Expired GB1001144A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11275661A 1961-05-26 1961-05-26

Publications (1)

Publication Number Publication Date
GB1001144A true GB1001144A (en) 1965-08-11

Family

ID=22345676

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2015662A Expired GB1001144A (en) 1961-05-26 1962-05-25 Production of inorganic compounds containing elements from groups iiib and vb of the periodic table

Country Status (3)

Country Link
BE (1) BE618117A (en)
GB (1) GB1001144A (en)
NL (1) NL278926A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084128A (en) * 1990-10-23 1992-01-28 E. I. Du Pont De Nemours And Company Low-temperature synthesis of group III-group V semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084128A (en) * 1990-10-23 1992-01-28 E. I. Du Pont De Nemours And Company Low-temperature synthesis of group III-group V semiconductors

Also Published As

Publication number Publication date
BE618117A (en) 1962-11-26
NL278926A (en)

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