GB0905359D0 - Phase change devices and methods for their manufacture - Google Patents

Phase change devices and methods for their manufacture

Info

Publication number
GB0905359D0
GB0905359D0 GBGB0905359.6A GB0905359A GB0905359D0 GB 0905359 D0 GB0905359 D0 GB 0905359D0 GB 0905359 A GB0905359 A GB 0905359A GB 0905359 D0 GB0905359 D0 GB 0905359D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
methods
phase change
change devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0905359.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Enterprise Ltd
Original Assignee
Cambridge Enterprise Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Priority to GBGB0905359.6A priority Critical patent/GB0905359D0/en
Publication of GB0905359D0 publication Critical patent/GB0905359D0/en
Priority to PCT/GB2010/000437 priority patent/WO2010106305A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
GBGB0905359.6A 2009-03-16 2009-03-27 Phase change devices and methods for their manufacture Ceased GB0905359D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0905359.6A GB0905359D0 (en) 2009-03-27 2009-03-27 Phase change devices and methods for their manufacture
PCT/GB2010/000437 WO2010106305A1 (en) 2009-03-16 2010-03-11 Phase change devices and methods for their manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0905359.6A GB0905359D0 (en) 2009-03-27 2009-03-27 Phase change devices and methods for their manufacture

Publications (1)

Publication Number Publication Date
GB0905359D0 true GB0905359D0 (en) 2009-05-13

Family

ID=40671876

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0905359.6A Ceased GB0905359D0 (en) 2009-03-16 2009-03-27 Phase change devices and methods for their manufacture

Country Status (2)

Country Link
GB (1) GB0905359D0 (en)
WO (1) WO2010106305A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106299113A (en) * 2016-08-22 2017-01-04 中国科学院上海微系统与信息技术研究所 Ge Sb Se phase-change material, phase-changing memory unit and preparation method thereof
CN110752292A (en) * 2019-09-24 2020-02-04 华中科技大学 A method for controlling the crystallization threshold of phase change materials by the interfacial effect of the capping layer
CN112331767B (en) * 2020-10-27 2023-12-22 华中科技大学 A Ge-Sb-based phase change material and multi-level phase change memory
CN113241405B (en) * 2021-04-14 2023-04-25 华中科技大学 Method for inducing crystallization of chalcogenide phase change material and application thereof
CN114744110B (en) * 2022-03-31 2025-06-24 华中科技大学 Compound-doped Ge-Sb-Te phase change materials and phase change memory based on lattice matching

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505709B1 (en) * 2003-09-08 2005-08-03 삼성전자주식회사 Phase change memory device capable of conducting Initial Firing effectively and method thereof
US6936840B2 (en) 2004-01-30 2005-08-30 International Business Machines Corporation Phase-change memory cell and method of fabricating the phase-change memory cell
US7009694B2 (en) 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells
KR100655796B1 (en) * 2004-08-17 2006-12-11 삼성전자주식회사 Phase change memory device and manufacturing method thereof
US7923724B2 (en) * 2005-01-10 2011-04-12 Ovonyx, Inc. Phase change memory that switches between crystalline phases
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7221579B2 (en) 2005-06-13 2007-05-22 International Business Machines Corporation Method and structure for high performance phase change memory
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US7745807B2 (en) 2007-07-11 2010-06-29 International Business Machines Corporation Current constricting phase change memory element structure
US7491573B1 (en) 2008-03-13 2009-02-17 International Business Machines Corporation Phase change materials for applications that require fast switching and high endurance

Also Published As

Publication number Publication date
WO2010106305A1 (en) 2010-09-23

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)