GB0605751D0 - Monolithically integrated optoelectronic components - Google Patents

Monolithically integrated optoelectronic components

Info

Publication number
GB0605751D0
GB0605751D0 GBGB0605751.7A GB0605751A GB0605751D0 GB 0605751 D0 GB0605751 D0 GB 0605751D0 GB 0605751 A GB0605751 A GB 0605751A GB 0605751 D0 GB0605751 D0 GB 0605751D0
Authority
GB
United Kingdom
Prior art keywords
monolithically integrated
optoelectronic components
integrated optoelectronic
components
monolithically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0605751.7A
Other versions
GB2436397A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Priority to GB0605751A priority Critical patent/GB2436397A/en
Publication of GB0605751D0 publication Critical patent/GB0605751D0/en
Priority to PCT/GB2007/050101 priority patent/WO2007107782A1/en
Publication of GB2436397A publication Critical patent/GB2436397A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
GB0605751A 2006-03-23 2006-03-23 Monolithically integrated optoelectronic components Withdrawn GB2436397A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0605751A GB2436397A (en) 2006-03-23 2006-03-23 Monolithically integrated optoelectronic components
PCT/GB2007/050101 WO2007107782A1 (en) 2006-03-23 2007-03-06 Monolithically integrated optoelectronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0605751A GB2436397A (en) 2006-03-23 2006-03-23 Monolithically integrated optoelectronic components

Publications (2)

Publication Number Publication Date
GB0605751D0 true GB0605751D0 (en) 2006-05-03
GB2436397A GB2436397A (en) 2007-09-26

Family

ID=36383970

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0605751A Withdrawn GB2436397A (en) 2006-03-23 2006-03-23 Monolithically integrated optoelectronic components

Country Status (2)

Country Link
GB (1) GB2436397A (en)
WO (1) WO2007107782A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863853A (en) * 2019-04-24 2020-10-30 深圳第三代半导体研究院 Vertical integrated unit diode chip

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017098689A1 (en) 2015-12-09 2017-06-15 パナソニック株式会社 Semiconductor light emitting device
GB2558308B (en) * 2016-12-30 2022-01-19 Lumentum Tech Uk Limited Electrical isolation in photonic integrated circuits
US11342724B2 (en) 2018-04-23 2022-05-24 Mitsubishi Electric Corporation Semiconductor optical integrated device
WO2020084687A1 (en) * 2018-10-23 2020-04-30 三菱電機株式会社 Semiconductor integrated optical device
US10684414B1 (en) 2019-01-29 2020-06-16 Ciene Corporation Interconnect between different multi-quantum well waveguides in a semiconductor photonic integrated circuit
JP6729982B2 (en) * 2019-05-27 2020-07-29 三菱電機株式会社 Semiconductor optical integrated device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103455A (en) * 1990-05-09 1992-04-07 Gte Laboratories Incorporated Monolithically integrated semiconductor optical preamplifier
JP4013394B2 (en) * 1999-03-30 2007-11-28 三菱電機株式会社 Semiconductor laser device
US6771682B2 (en) * 2002-08-12 2004-08-03 Infinera Corporation Electrical isolation of optical components in photonic integrated circuits (PICs)
US7106774B2 (en) * 2002-08-28 2006-09-12 T-Networks, Inc. Placing a semiconductor laser electrically in series with a semiconductor optical amplifier
GB0424253D0 (en) * 2004-05-20 2004-12-01 Bookham Technology Plc Laterally implanted electro-absorption modulated laser
JP4934271B2 (en) * 2004-06-11 2012-05-16 日本オプネクスト株式会社 Single power supply optical integrated device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863853A (en) * 2019-04-24 2020-10-30 深圳第三代半导体研究院 Vertical integrated unit diode chip

Also Published As

Publication number Publication date
WO2007107782A1 (en) 2007-09-27
GB2436397A (en) 2007-09-26

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)