GB0411952D0 - Trench filling methods - Google Patents
Trench filling methodsInfo
- Publication number
- GB0411952D0 GB0411952D0 GB0411952A GB0411952A GB0411952D0 GB 0411952 D0 GB0411952 D0 GB 0411952D0 GB 0411952 A GB0411952 A GB 0411952A GB 0411952 A GB0411952 A GB 0411952A GB 0411952 D0 GB0411952 D0 GB 0411952D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- trench filling
- filling methods
- methods
- trench
- filling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0312796A GB0312796D0 (en) | 2003-06-04 | 2003-06-04 | Trench filling methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0411952D0 true GB0411952D0 (en) | 2004-06-30 |
| GB2402549A GB2402549A (en) | 2004-12-08 |
Family
ID=9959291
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0312796A Ceased GB0312796D0 (en) | 2003-06-04 | 2003-06-04 | Trench filling methods |
| GB0411952A Withdrawn GB2402549A (en) | 2003-06-04 | 2004-05-28 | Two layer filling for high aspect ratio trenches |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0312796A Ceased GB0312796D0 (en) | 2003-06-04 | 2003-06-04 | Trench filling methods |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2004363615A (en) |
| DE (1) | DE102004026656A1 (en) |
| GB (2) | GB0312796D0 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007335807A (en) * | 2006-06-19 | 2007-12-27 | Toshiba Corp | Method for manufacturing semiconductor device |
| JP5841306B2 (en) * | 2009-05-08 | 2016-01-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4576834A (en) * | 1985-05-20 | 1986-03-18 | Ncr Corporation | Method for forming trench isolation structures |
| US5244827A (en) * | 1991-10-31 | 1993-09-14 | Sgs-Thomson Microelectronics, Inc. | Method for planarized isolation for cmos devices |
| KR100512167B1 (en) * | 2001-03-12 | 2005-09-02 | 삼성전자주식회사 | Method of forming trench type isolation layer |
| US20020182824A1 (en) * | 2001-06-05 | 2002-12-05 | United Microelectronics Corp. | Method of forming shallow trench isolation |
| US6737333B2 (en) * | 2001-07-03 | 2004-05-18 | Texas Instruments Incorporated | Semiconductor device isolation structure and method of forming |
| KR100428805B1 (en) * | 2001-08-09 | 2004-04-28 | 삼성전자주식회사 | Structure of Trench Isolation and Method of Forming The Same |
-
2003
- 2003-06-04 GB GB0312796A patent/GB0312796D0/en not_active Ceased
-
2004
- 2004-05-28 GB GB0411952A patent/GB2402549A/en not_active Withdrawn
- 2004-06-01 DE DE200410026656 patent/DE102004026656A1/en not_active Withdrawn
- 2004-06-04 JP JP2004167357A patent/JP2004363615A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2402549A (en) | 2004-12-08 |
| DE102004026656A1 (en) | 2004-12-30 |
| GB0312796D0 (en) | 2003-07-09 |
| JP2004363615A (en) | 2004-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |