GB0226575D0 - Fabrication of magnesium diboride superconductor thin films and electronics devices by ion implantation - Google Patents
Fabrication of magnesium diboride superconductor thin films and electronics devices by ion implantationInfo
- Publication number
- GB0226575D0 GB0226575D0 GBGB0226575.9A GB0226575A GB0226575D0 GB 0226575 D0 GB0226575 D0 GB 0226575D0 GB 0226575 A GB0226575 A GB 0226575A GB 0226575 D0 GB0226575 D0 GB 0226575D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabrication
- ion implantation
- thin films
- electronics devices
- superconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 title 1
- 238000005468 ion implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002887 superconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0856—Manufacture or treatment of devices comprising metal borides, e.g. MgB2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/126—Josephson-effect devices comprising metal borides, e.g. MgB2
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0226575.9A GB0226575D0 (en) | 2002-11-14 | 2002-11-14 | Fabrication of magnesium diboride superconductor thin films and electronics devices by ion implantation |
AU2003282243A AU2003282243A1 (en) | 2002-11-14 | 2003-11-14 | Fabrication of magnesium diboride superconductor thin films and electronic devices by ion implantation |
PCT/GB2003/004948 WO2004044262A1 (en) | 2002-11-14 | 2003-11-14 | Fabrication of magnesium diboride superconductor thin films and electronic devices by ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0226575.9A GB0226575D0 (en) | 2002-11-14 | 2002-11-14 | Fabrication of magnesium diboride superconductor thin films and electronics devices by ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
GB0226575D0 true GB0226575D0 (en) | 2002-12-18 |
Family
ID=9947818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0226575.9A Ceased GB0226575D0 (en) | 2002-11-14 | 2002-11-14 | Fabrication of magnesium diboride superconductor thin films and electronics devices by ion implantation |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003282243A1 (en) |
GB (1) | GB0226575D0 (en) |
WO (1) | WO2004044262A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214786B (en) * | 2011-05-03 | 2013-11-06 | 中国科学院电工研究所 | Method for preparing magnesium diboride superconducting thin film by electron beam annealing |
CN104112818A (en) * | 2013-04-19 | 2014-10-22 | 中国科学院物理研究所 | Superconducting quantum interference device structure and manufacturing method |
CN104882533B (en) * | 2015-04-29 | 2017-10-27 | 中国科学院电工研究所 | The method that electron beam annealing prepares MgB 2 superconductor wire material or band |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4976987A (en) * | 1989-08-10 | 1990-12-11 | The United States Of America As Represented By The Department Of Energy | Process for forming one or more substantially pure layers in substrate material using ion implantation |
EP0623950B1 (en) * | 1993-05-03 | 1997-06-18 | Forschungszentrum Rossendorf e.V. | Process for manufacturing tubular microstructures in solid state bodies |
KR100413533B1 (en) * | 2001-03-19 | 2003-12-31 | 학교법인 포항공과대학교 | Fabrication method of superconducting magnesium diboride thin film and its apparatus |
-
2002
- 2002-11-14 GB GBGB0226575.9A patent/GB0226575D0/en not_active Ceased
-
2003
- 2003-11-14 AU AU2003282243A patent/AU2003282243A1/en not_active Abandoned
- 2003-11-14 WO PCT/GB2003/004948 patent/WO2004044262A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
AU2003282243A1 (en) | 2004-06-03 |
WO2004044262A1 (en) | 2004-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |