GB0131001D0 - A photodiode - Google Patents

A photodiode

Info

Publication number
GB0131001D0
GB0131001D0 GBGB0131001.0A GB0131001A GB0131001D0 GB 0131001 D0 GB0131001 D0 GB 0131001D0 GB 0131001 A GB0131001 A GB 0131001A GB 0131001 D0 GB0131001 D0 GB 0131001D0
Authority
GB
United Kingdom
Prior art keywords
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0131001.0A
Other versions
GB2383679A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Priority to GB0131001A priority Critical patent/GB2383679A/en
Publication of GB0131001D0 publication Critical patent/GB0131001D0/en
Priority to GB0218842A priority patent/GB2383684A/en
Priority to PCT/GB2002/005930 priority patent/WO2003060599A2/en
Priority to US10/500,318 priority patent/US7386207B2/en
Priority to AU2002356330A priority patent/AU2002356330A1/en
Publication of GB2383679A publication Critical patent/GB2383679A/en
Priority to US12/080,824 priority patent/US7826700B2/en
Priority to US12/807,973 priority patent/US8326094B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
GB0131001A 2001-12-27 2001-12-27 PIN photodiode with intrinsic region implanted with deep band gap levels Withdrawn GB2383679A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB0131001A GB2383679A (en) 2001-12-27 2001-12-27 PIN photodiode with intrinsic region implanted with deep band gap levels
GB0218842A GB2383684A (en) 2001-12-27 2002-08-14 A light sensor
PCT/GB2002/005930 WO2003060599A2 (en) 2001-12-27 2002-12-27 An in-line waveguide photo detector
US10/500,318 US7386207B2 (en) 2001-12-27 2002-12-27 In-line light sensor
AU2002356330A AU2002356330A1 (en) 2001-12-27 2002-12-27 An in-line waveguide photo detector
US12/080,824 US7826700B2 (en) 2001-12-27 2008-04-04 In-line light sensor
US12/807,973 US8326094B2 (en) 2001-12-27 2010-09-17 In-line light sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0131001A GB2383679A (en) 2001-12-27 2001-12-27 PIN photodiode with intrinsic region implanted with deep band gap levels

Publications (2)

Publication Number Publication Date
GB0131001D0 true GB0131001D0 (en) 2002-02-13
GB2383679A GB2383679A (en) 2003-07-02

Family

ID=9928426

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0131001A Withdrawn GB2383679A (en) 2001-12-27 2001-12-27 PIN photodiode with intrinsic region implanted with deep band gap levels
GB0218842A Withdrawn GB2383684A (en) 2001-12-27 2002-08-14 A light sensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0218842A Withdrawn GB2383684A (en) 2001-12-27 2002-08-14 A light sensor

Country Status (1)

Country Link
GB (2) GB2383679A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2829906B1 (en) * 2013-07-23 2018-11-28 IMEC vzw Carrier-depletion based silicon waveguide resonant cavity modulator with integrated optical power monitor
CN111886704B (en) 2018-03-22 2024-04-12 Iee国际电子工程股份公司 Photodetector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140679A (en) * 1987-11-26 1989-06-01 Nec Corp Semiconductor photodetector
JPH02226776A (en) * 1989-02-28 1990-09-10 Canon Inc Wavelength selection photodetector
JPH0480974A (en) * 1990-07-24 1992-03-13 Hamamatsu Photonics Kk Semiconductor photodetector
US5227648A (en) * 1991-12-03 1993-07-13 Woo Jong Chun Resonance cavity photodiode array resolving wavelength and spectrum
US5291055A (en) * 1992-01-28 1994-03-01 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Resonant infrared detector with substantially unit quantum efficiency
US6074892A (en) * 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
EP0988652A2 (en) * 1998-03-19 2000-03-29 Koninklijke Philips Electronics N.V. Radiation-sensitive semiconductor device and method of manufacturing same

Also Published As

Publication number Publication date
GB2383684A (en) 2003-07-02
GB2383679A (en) 2003-07-02
GB0218842D0 (en) 2002-09-25

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)