GB0126258D0 - Transition - Google Patents
TransitionInfo
- Publication number
- GB0126258D0 GB0126258D0 GB0126258A GB0126258A GB0126258D0 GB 0126258 D0 GB0126258 D0 GB 0126258D0 GB 0126258 A GB0126258 A GB 0126258A GB 0126258 A GB0126258 A GB 0126258A GB 0126258 D0 GB0126258 D0 GB 0126258D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- ground
- transition
- hot conductor
- gcpw
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
- H01L2223/6633—Transition between different waveguide types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Waveguide Connection Structure (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
A transition 122 connects a ground backed coplanar waveguide (GCPW), which includes a hot conductor formed on a ground backed insulating substrate 120 and having parallel top ground planes 130, 131 on either side, to a ground backed microstrip transmission line 121 formed on an insulating substrate 120. The hot conductor of the GCPW and the hot conductor of the microstrip transmission line are electrically connected together, there being vias extending through the insulating substrate and forming an electrical connection between the top ground planes 130, 131 and the ground backing 205. The transition 122 from the GCPW structure to the microstrip structure is such that the characteristic impedance of the feed-line is a substantially constant 50 L along its length within the operating frequency range such that broadband operation is possible. In one aspect, the transition 122 is tapered in width and ends of the ground planes 130, 131 are rounded, and splay outwardly from the hot conductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0126258A GB2381668A (en) | 2001-11-01 | 2001-11-01 | Microstrip to coplanar waveguide transition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0126258A GB2381668A (en) | 2001-11-01 | 2001-11-01 | Microstrip to coplanar waveguide transition |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0126258D0 true GB0126258D0 (en) | 2002-01-02 |
GB2381668A GB2381668A (en) | 2003-05-07 |
Family
ID=9924966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0126258A Withdrawn GB2381668A (en) | 2001-11-01 | 2001-11-01 | Microstrip to coplanar waveguide transition |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2381668A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113764850A (en) * | 2021-09-10 | 2021-12-07 | 中国科学院空天信息创新研究院 | Grounded coplanar waveguide-rectangular waveguide filtering transition structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1555712A1 (en) * | 2004-01-13 | 2005-07-20 | Alcatel | High frequency mode converter |
GB201105912D0 (en) | 2011-04-07 | 2011-05-18 | Diamond Microwave Devices Ltd | Improved matching techniques for power transistors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4906953A (en) * | 1988-09-08 | 1990-03-06 | Varian Associates, Inc. | Broadband microstrip to coplanar waveguide transition by anisotropic etching of gallium arsenide |
JP3580667B2 (en) * | 1997-05-28 | 2004-10-27 | 京セラ株式会社 | Conversion line |
DE10031657A1 (en) * | 2000-06-29 | 2002-01-24 | Siemens Ag | High-frequency component |
-
2001
- 2001-11-01 GB GB0126258A patent/GB2381668A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113764850A (en) * | 2021-09-10 | 2021-12-07 | 中国科学院空天信息创新研究院 | Grounded coplanar waveguide-rectangular waveguide filtering transition structure |
CN113764850B (en) * | 2021-09-10 | 2022-06-03 | 中国科学院空天信息创新研究院 | Grounded coplanar waveguide-rectangular waveguide filtering transition structure |
Also Published As
Publication number | Publication date |
---|---|
GB2381668A (en) | 2003-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
COOA | Change in applicant's name or ownership of the application | ||
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |