FR999749A - Procédé de fabrication de redresseurs au germanium - Google Patents
Procédé de fabrication de redresseurs au germaniumInfo
- Publication number
- FR999749A FR999749A FR999749DA FR999749A FR 999749 A FR999749 A FR 999749A FR 999749D A FR999749D A FR 999749DA FR 999749 A FR999749 A FR 999749A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- germanium rectifiers
- rectifiers
- germanium
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3206949 | 1949-10-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR999749A true FR999749A (fr) | 1952-02-04 |
Family
ID=10332704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR999749D Expired FR999749A (fr) | 1949-10-27 | 1949-11-21 | Procédé de fabrication de redresseurs au germanium |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR999749A (fr) |
GB (1) | GB648186A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1288688B (de) * | 1955-02-15 | 1969-02-06 | Siemens Ag | Diffusionsverfahren zum Dotieren einer Oberflaechenschicht von festen Halbleiterkoerpern fuer Halbleiterbauelemente |
-
1948
- 1948-12-10 GB GB32069/48A patent/GB648186A/en not_active Expired
-
1949
- 1949-11-21 FR FR999749D patent/FR999749A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB648186A (en) | 1951-01-03 |
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