FR938668A - synthetic crystalline element and process for its manufacture - Google Patents

synthetic crystalline element and process for its manufacture

Info

Publication number
FR938668A
FR938668A FR938668DA FR938668A FR 938668 A FR938668 A FR 938668A FR 938668D A FR938668D A FR 938668DA FR 938668 A FR938668 A FR 938668A
Authority
FR
France
Prior art keywords
manufacture
synthetic crystalline
crystalline element
synthetic
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linde Air Products Co
Original Assignee
Linde Air Products Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Linde Air Products Co filed Critical Linde Air Products Co
Application granted granted Critical
Publication of FR938668A publication Critical patent/FR938668A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR938668D 1944-05-02 1946-10-22 synthetic crystalline element and process for its manufacture Expired FR938668A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US254187XA 1944-05-02 1944-05-02

Publications (1)

Publication Number Publication Date
FR938668A true FR938668A (en) 1948-10-21

Family

ID=21825933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR938668D Expired FR938668A (en) 1944-05-02 1946-10-22 synthetic crystalline element and process for its manufacture

Country Status (2)

Country Link
CH (1) CH254187A (en)
FR (1) FR938668A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1075555B (en) * 1960-02-18 Siemens S. Halske Aktiengesellschaft, Berlin und München Process for the production of the purest refractory materials for semiconductor purposes z. B. of boron nitrogen
DE1089367B (en) * 1956-12-31 1960-09-22 Union Carbide Corp Device for producing crystalline bodies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1075555B (en) * 1960-02-18 Siemens S. Halske Aktiengesellschaft, Berlin und München Process for the production of the purest refractory materials for semiconductor purposes z. B. of boron nitrogen
DE1089367B (en) * 1956-12-31 1960-09-22 Union Carbide Corp Device for producing crystalline bodies

Also Published As

Publication number Publication date
CH254187A (en) 1948-04-30

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