FR936790A - Procédé de fabrication de cellules à couche d'arrêt et cellules fabriquées suivant ce procédé - Google Patents

Procédé de fabrication de cellules à couche d'arrêt et cellules fabriquées suivant ce procédé

Info

Publication number
FR936790A
FR936790A FR936790DA FR936790A FR 936790 A FR936790 A FR 936790A FR 936790D A FR936790D A FR 936790DA FR 936790 A FR936790 A FR 936790A
Authority
FR
France
Prior art keywords
cells
barrier layer
manufactured
manufacturing barrier
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR936790A publication Critical patent/FR936790A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
FR936790D 1944-09-02 1946-10-15 Procédé de fabrication de cellules à couche d'arrêt et cellules fabriquées suivant ce procédé Expired FR936790A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL255236X 1944-09-02

Publications (1)

Publication Number Publication Date
FR936790A true FR936790A (fr) 1948-07-29

Family

ID=19781273

Family Applications (1)

Application Number Title Priority Date Filing Date
FR936790D Expired FR936790A (fr) 1944-09-02 1946-10-15 Procédé de fabrication de cellules à couche d'arrêt et cellules fabriquées suivant ce procédé

Country Status (4)

Country Link
US (1) US2501798A (fr)
BE (1) BE465046A (fr)
CH (1) CH255236A (fr)
FR (1) FR936790A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB302177A (fr) * 1927-12-10 1929-12-12 Sueddeutsche Telefon-Apparate, Kabel- Und Drahtwerke, Aktiengesellschaft
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
NL93270C (fr) * 1938-06-07
IT376601A (fr) * 1938-08-10
NL57635C (fr) * 1938-09-09
US2391706A (en) * 1940-10-10 1945-12-25 Battelle Memorial Institute Method of forming blocking layers on selenium coated plates
US2414438A (en) * 1942-12-01 1947-01-21 Standard Telephones Cables Ltd Electrodeposition of selenium

Also Published As

Publication number Publication date
BE465046A (fr) 1900-01-01
US2501798A (en) 1950-03-28
CH255236A (de) 1948-06-15

Similar Documents

Publication Publication Date Title
FR1213405A (fr) Compositions anti-corrosives et leur procédé de fabrication
FR1129941A (fr) Procédé de fabrication de corps semi-conducteurs à zones voisines de conductibilité différente
FR936790A (fr) Procédé de fabrication de cellules à couche d'arrêt et cellules fabriquées suivant ce procédé
FR911099A (fr) Portes et panneaux et leur procédé de fabrication
FR1112727A (fr) élément semi-conducteur et procédé de fabrication dudit élément
FR992914A (fr) Fabrication des cellules à couche d'arrêt
FR1049023A (fr) Procédé de fabrication de pentachlorophénol
FR907568A (fr) Panneaux et leur procédé de fabrication
FR894895A (fr) Procédé de fabrication d'électrodes à couche d'arrêt
FR902072A (fr) Procédé de fabrication de cellules à couche d'arrêt du type au sélénium, en particulier de redresseurs de mesure, et cellules à couches d'arrêt fabriquées suivant ce procédé
FR928294A (fr) Rubans isolants et leur procédé de fabrication
FR1048090A (fr) Procédé de fabrication de corps cellulaires à cellules fermées
FR1097571A (fr) Panneau à alvéoles circulaires et procédé de fabrication dudit panneau
FR906901A (fr) Panneau de construction en bois et son procédé de fabrication
FR938072A (fr) Cellule photo-électrique et son procédé de fabrication
FR56135E (fr) Boîte étanche à fenêtres transparentes et procédé de fabrication
FR904532A (fr) Procédé de fabrication d'électrodes
FR1030337A (fr) Piles thermoélectriques et leur procédé de fabrication
FR899298A (fr) Procédé de fabrication de pierres celluaires artificielles
FR977582A (fr) Nouveaux récipients à parois athermanes et leur procédé de fabrication
FR1193338A (fr) Procédé de fabrication de matériaux de construction et matériaux obtenus
FR1087709A (fr) élément de construction et procédé de fabrication
FR820033A (fr) Procédé de fabrication des cellules photo-électriques à couche d'arrêt
FR986905A (fr) Procédé de fabrication de matériaux silico-alcalino-terreux et matériaux résultant de l'application de ce procédé
FR910262A (fr) Faulx et son procédé de fabrication