FR927778A - Préparation d'un cristal semi-conducteur - Google Patents

Préparation d'un cristal semi-conducteur

Info

Publication number
FR927778A
FR927778A FR927778DA FR927778A FR 927778 A FR927778 A FR 927778A FR 927778D A FR927778D A FR 927778DA FR 927778 A FR927778 A FR 927778A
Authority
FR
France
Prior art keywords
preparation
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Application granted granted Critical
Publication of FR927778A publication Critical patent/FR927778A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Contacts (AREA)
  • Conductive Materials (AREA)
FR927778D 1943-03-22 1946-06-11 Préparation d'un cristal semi-conducteur Expired FR927778A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB265647X 1943-03-22

Publications (1)

Publication Number Publication Date
FR927778A true FR927778A (fr) 1947-11-10

Family

ID=10245624

Family Applications (1)

Application Number Title Priority Date Filing Date
FR927778D Expired FR927778A (fr) 1943-03-22 1946-06-11 Préparation d'un cristal semi-conducteur

Country Status (6)

Country Link
US (1) US2438944A (fr)
BE (1) BE467418A (fr)
CH (1) CH265647A (fr)
FR (1) FR927778A (fr)
GB (1) GB578013A (fr)
NL (1) NL64663C (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE466591A (fr) * 1945-07-13
NL84057C (fr) * 1948-02-26
US2654834A (en) * 1949-11-01 1953-10-06 Motorola Inc Transmit-receive switch
NL82014C (fr) * 1949-11-30
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
DE1032406B (de) * 1955-07-09 1958-06-19 Licentia Gmbh Verfahren zum Herstellen von Legierungskontakten an Halbleitern
DE1041164B (de) * 1955-07-11 1958-10-16 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit einem Halbleiterkristall

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1990277A (en) * 1930-09-13 1935-02-05 Feussner Otto Metals of the platinum group and certain alloys

Also Published As

Publication number Publication date
BE467418A (fr)
CH265647A (de) 1949-12-15
NL64663C (fr)
GB578013A (en) 1946-06-12
US2438944A (en) 1948-04-06

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