GB578013A - Improvements in crystal contacts of which one element is silicon - Google Patents

Improvements in crystal contacts of which one element is silicon

Info

Publication number
GB578013A
GB578013A GB4676/43A GB467643A GB578013A GB 578013 A GB578013 A GB 578013A GB 4676/43 A GB4676/43 A GB 4676/43A GB 467643 A GB467643 A GB 467643A GB 578013 A GB578013 A GB 578013A
Authority
GB
United Kingdom
Prior art keywords
silicon
crystal
crystal contacts
per cent
ransley
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4676/43A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Publication of GB578013A publication Critical patent/GB578013A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Contacts (AREA)
  • Conductive Materials (AREA)

Abstract

578,013. Silicon alloys. GENERAL ELECTRIC CO., Ltd., and RANSLEY, C. E. March 22, 1943, No. 4676. [Class 90] [Also in Group II] An alloy for use as a crystal contact is obtained by incorporating about 10 per cent. or more of chromium or molybdenum or both in silicon. Smaller quantities, e.g., 1 per cent, of aluminium or beryllium or both may also be added. The crystal may be further treated as described in Specification 577,181. Specification 577,976 also is referred to.
GB4676/43A 1943-03-22 1943-03-22 Improvements in crystal contacts of which one element is silicon Expired GB578013A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB265647X 1943-03-22

Publications (1)

Publication Number Publication Date
GB578013A true GB578013A (en) 1946-06-12

Family

ID=10245624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4676/43A Expired GB578013A (en) 1943-03-22 1943-03-22 Improvements in crystal contacts of which one element is silicon

Country Status (6)

Country Link
US (1) US2438944A (en)
BE (1) BE467418A (en)
CH (1) CH265647A (en)
FR (1) FR927778A (en)
GB (1) GB578013A (en)
NL (1) NL64663C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE466591A (en) * 1945-07-13
NL84057C (en) * 1948-02-26
US2654834A (en) * 1949-11-01 1953-10-06 Motorola Inc Transmit-receive switch
NL82014C (en) * 1949-11-30
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
DE1032406B (en) * 1955-07-09 1958-06-19 Licentia Gmbh Method for producing alloy contacts on semiconductors
DE1041164B (en) * 1955-07-11 1958-10-16 Licentia Gmbh Process for the production of electrically asymmetrically conductive systems with a semiconductor crystal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1990277A (en) * 1930-09-13 1935-02-05 Feussner Otto Metals of the platinum group and certain alloys

Also Published As

Publication number Publication date
NL64663C (en)
FR927778A (en) 1947-11-10
CH265647A (en) 1949-12-15
BE467418A (en)
US2438944A (en) 1948-04-06

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