FR864586A - Dispositifs à conductibilité asymétrique au sélénium - Google Patents

Dispositifs à conductibilité asymétrique au sélénium

Info

Publication number
FR864586A
FR864586A FR864586DA FR864586A FR 864586 A FR864586 A FR 864586A FR 864586D A FR864586D A FR 864586DA FR 864586 A FR864586 A FR 864586A
Authority
FR
France
Prior art keywords
selenium
asymmetric
conductivity devices
conductivity
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Application granted granted Critical
Publication of FR864586A publication Critical patent/FR864586A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/30—Igniting arrangements
    • H01J17/32—Igniting by associated radioactive materials or fillings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Light Receiving Elements (AREA)
  • Die Bonding (AREA)
FR864586D 1939-05-26 1940-03-30 Dispositifs à conductibilité asymétrique au sélénium Expired FR864586A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB15717/39A GB529792A (en) 1939-05-26 1939-05-26 Improvements relating to the manufacture of selenium and like rectifiers

Publications (1)

Publication Number Publication Date
FR864586A true FR864586A (fr) 1941-04-30

Family

ID=10064202

Family Applications (1)

Application Number Title Priority Date Filing Date
FR864586D Expired FR864586A (fr) 1939-05-26 1940-03-30 Dispositifs à conductibilité asymétrique au sélénium

Country Status (6)

Country Link
US (1) US2235051A (ru)
BE (1) BE467188A (ru)
CH (2) CH260423A (ru)
ES (1) ES174802A1 (ru)
FR (1) FR864586A (ru)
GB (1) GB529792A (ru)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2450020A (en) * 1942-12-03 1948-09-28 Int Standard Electric Corp Manufacture of rectifier disks
GB561889A (en) * 1942-12-03 1944-06-08 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of rectifier discs
US2444430A (en) * 1943-07-13 1948-07-06 Fed Telephone & Radio Corp Metal rectifier element
BE475134A (ru) * 1943-10-26
US2444255A (en) * 1944-11-10 1948-06-29 Gen Electric Fabrication of rectifier cells
US2685728A (en) * 1949-02-21 1954-08-10 Bell Telephone Labor Inc Translating material and method of manufacture
US2659846A (en) * 1951-05-15 1953-11-17 Int Rectifier Corp Selenium element and method of making it
US2743506A (en) * 1952-02-23 1956-05-01 Int Resistance Co Method of manufacturing rectifier cells
DE1041598B (de) * 1953-08-24 1958-10-23 Siemens Ag Verfahren zur Fertigung von Selengleichrichtern
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
US3086281A (en) * 1957-05-06 1963-04-23 Shockley William Semiconductor leads and method of attaching
NL122283C (ru) * 1958-07-25
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces

Also Published As

Publication number Publication date
GB529792A (en) 1940-11-28
CH260423A (fr) 1949-03-15
CH260424A (de) 1949-03-15
ES174802A1 (es) 1946-10-16
US2235051A (en) 1941-03-18
BE467188A (ru)

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