FR807072A - Système d'électrodes à conductibilité asymétrique - Google Patents

Système d'électrodes à conductibilité asymétrique

Info

Publication number
FR807072A
FR807072A FR807072DA FR807072A FR 807072 A FR807072 A FR 807072A FR 807072D A FR807072D A FR 807072DA FR 807072 A FR807072 A FR 807072A
Authority
FR
France
Prior art keywords
electrode system
conductivity electrode
asymmetric conductivity
asymmetric
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR807072A publication Critical patent/FR807072A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/042—Preparation of foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
FR807072D 1935-06-07 1936-06-05 Système d'électrodes à conductibilité asymétrique Expired FR807072A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE471390X 1935-06-07
DE2109879X 1935-12-19

Publications (1)

Publication Number Publication Date
FR807072A true FR807072A (fr) 1937-01-04

Family

ID=32031404

Family Applications (1)

Application Number Title Priority Date Filing Date
FR807072D Expired FR807072A (fr) 1935-06-07 1936-06-05 Système d'électrodes à conductibilité asymétrique

Country Status (8)

Country Link
US (1) US2109879A (Home)
AT (1) AT149626B (Home)
BE (1) BE415725A (Home)
CH (1) CH191661A (Home)
DK (1) DK54032C (Home)
FR (1) FR807072A (Home)
GB (1) GB471390A (Home)
NL (1) NL45637C (Home)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974772C (de) * 1939-01-22 1961-04-20 Int Standard Electric Corp Selengleichrichter, bei dem eine Druckbeanspruchung der Sperrschicht vermieden ist

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961733C (de) * 1939-01-17 1957-04-11 Aeg Verfahren zum Herstellen elektrisch unsymmetrisch leitender Elemente mit einem Halbleiter wie Selen
US2524270A (en) * 1945-09-27 1950-10-03 Sylvania Electric Prod Selenium rectifier
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
DE972120C (de) * 1950-09-24 1959-05-27 Siemens Ag Verfahren zur Herstellung eines Selengleichrichters der Freiflaechenbauart
DE1086822B (de) * 1952-07-31 1960-08-11 Anna Luise Falkenthal Geb Broe Fotoelement mit Vorderwandeffekt
US3013328A (en) * 1954-10-22 1961-12-19 Gen Electric Method of forming a conductive film
US2875103A (en) * 1956-06-07 1959-02-24 Westinghouse Brake And Sigual Method of manufacturing selenium rectifiers
US3226610A (en) * 1962-03-01 1965-12-28 Jr George G Harman Constant-current semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE974772C (de) * 1939-01-22 1961-04-20 Int Standard Electric Corp Selengleichrichter, bei dem eine Druckbeanspruchung der Sperrschicht vermieden ist

Also Published As

Publication number Publication date
CH191661A (de) 1937-06-30
US2109879A (en) 1938-03-01
GB471390A (en) 1937-09-03
NL45637C (Home) 1900-01-01
AT149626B (de) 1937-05-10
BE415725A (Home) 1900-01-01
DK54032C (da) 1937-12-20

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