FR77521E - Method for making a heavily endowed zone in semiconductor bodies - Google Patents

Method for making a heavily endowed zone in semiconductor bodies

Info

Publication number
FR77521E
FR77521E FR824276A FR824276A FR77521E FR 77521 E FR77521 E FR 77521E FR 824276 A FR824276 A FR 824276A FR 824276 A FR824276 A FR 824276A FR 77521 E FR77521 E FR 77521E
Authority
FR
France
Prior art keywords
zone
making
semiconductor bodies
heavily endowed
endowed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR824276A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES58618A external-priority patent/DE1106877B/en
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR824276A priority Critical patent/FR77521E/en
Application granted granted Critical
Publication of FR77521E publication Critical patent/FR77521E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR824276A 1958-06-14 1960-04-13 Method for making a heavily endowed zone in semiconductor bodies Expired FR77521E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR824276A FR77521E (en) 1958-06-14 1960-04-13 Method for making a heavily endowed zone in semiconductor bodies

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES58618A DE1106877B (en) 1958-06-14 1958-06-14 Process for the production of a highly doped area in semiconductor bodies by alloying foils made of a gold alloy
DES62641A DE1112208B (en) 1958-06-14 1959-04-18 Process for the production of a highly doped area in semiconductor bodies by alloying foils made of a gold alloy containing bismuth
FR824276A FR77521E (en) 1958-06-14 1960-04-13 Method for making a heavily endowed zone in semiconductor bodies

Publications (1)

Publication Number Publication Date
FR77521E true FR77521E (en) 1962-03-16

Family

ID=27212634

Family Applications (1)

Application Number Title Priority Date Filing Date
FR824276A Expired FR77521E (en) 1958-06-14 1960-04-13 Method for making a heavily endowed zone in semiconductor bodies

Country Status (1)

Country Link
FR (1) FR77521E (en)

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