Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
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Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SAfiledCriticalCompagnie Francaise Thomson Houston SA
Application grantedgrantedCritical
Publication of FR72192EpublicationCriticalpatent/FR72192E/fr
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P50/00—Etching of wafers, substrates or parts of devices
H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
H10P50/00—Etching of wafers, substrates or parts of devices
H10P50/60—Wet etching
H10P50/61—Electrolytic etching
H10P50/613—Electrolytic etching of Group IV materials
FR72192D1957-08-221957-08-22Procédé de préparation de dispositifs utilisant des couches de transition entre semiconducteurs des types <<p>> et n
ExpiredFR72192E
(fr)