FR712098A - Dry current rectifier. - Google Patents

Dry current rectifier.

Info

Publication number
FR712098A
FR712098A FR712098DA FR712098A FR 712098 A FR712098 A FR 712098A FR 712098D A FR712098D A FR 712098DA FR 712098 A FR712098 A FR 712098A
Authority
FR
France
Prior art keywords
current rectifier
dry current
dry
rectifier
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Inventor
Willem Christiaan Van Geel
Jan Hendrik De Boer
Hendrik Emmens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR712098A publication Critical patent/FR712098A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B42/00Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
    • G03B42/02Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
    • G03B42/025Positioning or masking the X-ray film cartridge in the radiographic apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479Application of electric currents or fields, e.g. for electroforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Hybrid Cells (AREA)
FR712098D 1930-03-08 1931-02-25 Dry current rectifier. Expired FR712098A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL50649A NL34153C (en) 1930-03-08 1930-03-08

Publications (1)

Publication Number Publication Date
FR712098A true FR712098A (en) 1931-09-24

Family

ID=47996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR712098D Expired FR712098A (en) 1930-03-08 1931-02-25 Dry current rectifier.

Country Status (9)

Country Link
US (1) US1985118A (en)
AT (1) AT128220B (en)
BE (1) BE377298A (en)
CH (1) CH155911A (en)
DE (1) DE631649C (en)
DK (1) DK45412C (en)
FR (1) FR712098A (en)
GB (1) GB361738A (en)
NL (1) NL34153C (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB702620A (en) * 1951-10-26 1954-01-20 Standard Telephones Cables Ltd Improvements in or relating to dry contact rectifiers
US2749489A (en) * 1950-12-04 1956-06-05 Int Standard Electric Corp Dry contact rectifiers
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers
US2766509A (en) * 1952-05-22 1956-10-16 Gen Electric Titanium dioxide rectifier
US2784639A (en) * 1953-05-04 1957-03-12 Eastman Kodak Co Titanium nitride coated optical element
US2874102A (en) * 1953-08-12 1959-02-17 Rca Corp Electrodes and methods of making same
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode
US3198718A (en) * 1960-05-26 1965-08-03 Lockheed Aircraft Corp Method for making structurally integrated film resistor assembly
US3199999A (en) * 1961-03-23 1965-08-10 Hi Shear Corp Pigment of titanium having titanium oxide coating; electrolytic method of making pigment; and reflector and paint containing same
US3180807A (en) * 1961-10-23 1965-04-27 Lockheed Aircraft Corp Method for making film resistors

Also Published As

Publication number Publication date
DE631649C (en) 1936-06-25
AT128220B (en) 1932-05-10
DK45412C (en) 1932-03-21
GB361738A (en) 1931-11-26
NL34153C (en) 1934-10-23
CH155911A (en) 1932-07-15
BE377298A (en) 1931-03-30
US1985118A (en) 1934-12-18

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