FR70708E - Triodes utilisant des cristaux tels que des cristaux de germanium - Google Patents

Triodes utilisant des cristaux tels que des cristaux de germanium

Info

Publication number
FR70708E
FR70708E FR70708DA FR70708E FR 70708 E FR70708 E FR 70708E FR 70708D A FR70708D A FR 70708DA FR 70708 E FR70708 E FR 70708E
Authority
FR
France
Prior art keywords
crystals
triodes
germanium
germanium crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Arthur Julius Radcliffe Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB604149A external-priority patent/GB681829A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR70708E publication Critical patent/FR70708E/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00Baseband systems
    • H04L25/02Details ; arrangements for supplying electrical power along data transmission lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S74/00Machine element or mechanism
    • Y10S74/06Transistor-electronic gearing controls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Thermistors And Varistors (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Bipolar Transistors (AREA)
  • Electroplating Methods And Accessories (AREA)
FR70708D 1949-04-01 1956-01-26 Triodes utilisant des cristaux tels que des cristaux de germanium Expired FR70708E (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB604149A GB681829A (en) 1950-08-25 1949-04-01 Improvements in or relating to amplifiers employing semi-conductors
GB21041/50A GB692802A (en) 1949-04-01 1950-08-25 Improvements in or relating to electric trigger circuits
US472109A US2918627A (en) 1949-04-01 1954-11-30 Temperature-compensated directcurrent amplifier
US595378A US2830257A (en) 1949-04-01 1956-07-02 Temperature-compensated directcurrent transistor amplifier

Publications (1)

Publication Number Publication Date
FR70708E true FR70708E (fr) 1959-07-10

Family

ID=32303563

Family Applications (5)

Application Number Title Priority Date Filing Date
FR1033789D Expired FR1033789A (fr) 1949-04-01 1951-03-09 Triodes utilisant des cristaux tels que des cristaux de germanium
FR61931D Expired FR61931E (fr) 1949-04-01 1951-07-26 Triodes utilisant des cristaux tels que des cristaux de germanium
FR69045D Expired FR69045E (fr) 1949-04-01 1955-11-29 Triodes utilisant des cristaux tels que des cristaux de germanium
FR70708D Expired FR70708E (fr) 1949-04-01 1956-01-26 Triodes utilisant des cristaux tels que des cristaux de germanium
FR72080D Expired FR72080E (fr) 1949-04-01 1957-06-28 Triodes utilisant des cristaux tels que des cristaux de germanium

Family Applications Before (3)

Application Number Title Priority Date Filing Date
FR1033789D Expired FR1033789A (fr) 1949-04-01 1951-03-09 Triodes utilisant des cristaux tels que des cristaux de germanium
FR61931D Expired FR61931E (fr) 1949-04-01 1951-07-26 Triodes utilisant des cristaux tels que des cristaux de germanium
FR69045D Expired FR69045E (fr) 1949-04-01 1955-11-29 Triodes utilisant des cristaux tels que des cristaux de germanium

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR72080D Expired FR72080E (fr) 1949-04-01 1957-06-28 Triodes utilisant des cristaux tels que des cristaux de germanium

Country Status (7)

Country Link
US (4) US2701281A (fr)
BE (2) BE505195A (fr)
CH (1) CH316530A (fr)
DE (1) DE939699C (fr)
FR (5) FR1033789A (fr)
GB (2) GB692802A (fr)
NL (1) NL162732B (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702838A (en) * 1951-11-15 1955-02-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2852588A (en) * 1953-01-08 1958-09-16 Holley Carburetor Co Ignition system for an internal combustion engine
US2852589A (en) * 1953-02-13 1958-09-16 Holley Carburetor Co Ignition circuit
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2933619A (en) * 1953-03-25 1960-04-19 Siemens Ag Semi-conductor device comprising an anode, a cathode and a control electrode
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
NL97560C (fr) * 1953-05-14
US2859286A (en) * 1953-11-12 1958-11-04 Raytheon Mfg Co Variable gain devices
US2847583A (en) * 1954-12-13 1958-08-12 Rca Corp Semiconductor devices and stabilization thereof
US2877358A (en) * 1955-06-20 1959-03-10 Bell Telephone Labor Inc Semiconductive pulse translator
US2929999A (en) * 1955-09-19 1960-03-22 Philco Corp Semiconductive device and apparatus
US2994810A (en) * 1955-11-04 1961-08-01 Hughes Aircraft Co Auxiliary emitter transistor
US2864904A (en) * 1955-11-29 1958-12-16 Honeywell Regulator Co Semi-conductor circuit
US3189734A (en) * 1958-08-04 1965-06-15 Thompson Ramo Wooldridge Inc Control system with rate prediction
US3183364A (en) * 1959-05-29 1965-05-11 Itt Electronic single pole-double throw switch
US3030562A (en) * 1960-12-27 1962-04-17 Pacific Semiconductors Inc Micro-miniaturized transistor
US3169222A (en) * 1960-12-30 1965-02-09 Rca Corp Double-emitter transistor circuits
US3119029A (en) * 1961-10-31 1964-01-21 Duane J Russell Transistor bipolar integrator
US3163829A (en) * 1962-05-10 1964-12-29 Anelex Corp Shortproof emitter follower protective circuit
US3205458A (en) * 1962-07-25 1965-09-07 Dresser Sie Inc Semi-conductor modulator circuit
US3418495A (en) * 1965-10-23 1968-12-24 Bose Corp Switching
US3891934A (en) * 1974-05-22 1975-06-24 Adams Russel Co Inc Transistor amplifier with impedance matching transformer
KR100776868B1 (ko) * 2000-08-16 2007-11-16 레이던 컴퍼니 레이더 수신기를 위한 비디오 증폭기

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2070071A (en) * 1932-03-14 1937-02-09 Revelation Patents Holding Com Electrical transmission system
US2441334A (en) * 1943-04-30 1948-05-11 Du Mont Allen B Lab Inc Signal level and phase control
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2542160A (en) * 1948-02-28 1951-02-20 Boeing Co Electronic integrating circuit
NL75792C (fr) * 1948-05-19
US2533001A (en) * 1949-04-30 1950-12-05 Rca Corp Flip-flop counter circuit
US2569345A (en) * 1950-03-28 1951-09-25 Gen Electric Transistor multivibrator circuit
BE511224A (fr) * 1951-09-13

Also Published As

Publication number Publication date
FR61931E (fr) 1955-05-31
US2918627A (en) 1959-12-22
CH316530A (fr) 1956-10-15
FR69045E (fr) 1958-08-27
BE558880A (fr)
US2624016A (en) 1952-12-30
FR1033789A (fr) 1953-07-15
GB809214A (en) 1959-02-18
BE505195A (fr)
DE939699C (de) 1956-03-01
FR72080E (fr) 1960-03-21
US2701281A (en) 1955-02-01
US2830257A (en) 1958-04-08
NL162732B (nl)
GB692802A (en) 1953-06-17

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