FR51098E - Procédé pour la fabrication d'éléments conducteurs électriques - Google Patents

Procédé pour la fabrication d'éléments conducteurs électriques

Info

Publication number
FR51098E
FR51098E FR51098DA FR51098E FR 51098 E FR51098 E FR 51098E FR 51098D A FR51098D A FR 51098DA FR 51098 E FR51098 E FR 51098E
Authority
FR
France
Prior art keywords
manufacture
electrically conductive
conductive elements
elements
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie des Freins et Signaux Westinghouse SA
Original Assignee
Compagnie des Freins et Signaux Westinghouse SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie des Freins et Signaux Westinghouse SA filed Critical Compagnie des Freins et Signaux Westinghouse SA
Application granted granted Critical
Publication of FR51098E publication Critical patent/FR51098E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Motors, Generators (AREA)
  • Thermistors And Varistors (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
FR51098D 1939-05-26 1940-03-30 Procédé pour la fabrication d'éléments conducteurs électriques Expired FR51098E (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB15716/39A GB529791A (en) 1939-05-26 1939-05-26 Improvements relating to the manufacture of selenium rectifiers

Publications (1)

Publication Number Publication Date
FR51098E true FR51098E (fr) 1941-08-06

Family

ID=10064184

Family Applications (1)

Application Number Title Priority Date Filing Date
FR51098D Expired FR51098E (fr) 1939-05-26 1940-03-30 Procédé pour la fabrication d'éléments conducteurs électriques

Country Status (6)

Country Link
US (1) US2307474A (fr)
BE (1) BE466859A (fr)
DE (1) DE861283C (fr)
FR (1) FR51098E (fr)
GB (1) GB529791A (fr)
NL (1) NL62477C (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970124C (de) * 1944-01-17 1958-09-04 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
US2453763A (en) * 1945-07-07 1948-11-16 Ruben Samuel Selenium rectifier and process for making same
US2559279A (en) * 1947-03-27 1951-07-03 Cie Generale De T S F Manufacture of electroluminescent screens
US2575392A (en) * 1947-12-11 1951-11-20 Vickers Inc Method of annealing a selenium coating
US2766210A (en) * 1949-05-06 1956-10-09 Sylvania Electric Prod Manufacture of selenium elements
US2740925A (en) * 1952-02-18 1956-04-03 Int Rectifier Corp Tellurium rectifier and method of making it
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
US3077386A (en) * 1958-01-02 1963-02-12 Xerox Corp Process for treating selenium
DE1186555B (de) * 1962-04-07 1965-02-04 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern mit hoher Sperrfaehigkeit
KR100563923B1 (ko) * 1998-07-14 2006-08-14 쇼와 덴코 가부시키가이샤 유기 붕산염의 안정화제 및 이를 함유하는 감광성 조성물
CN109273355B (zh) * 2018-06-06 2022-03-01 鹤壁维达科巽电气有限公司 一种硒整流片制备工艺

Also Published As

Publication number Publication date
DE861283C (de) 1952-12-29
GB529791A (en) 1940-11-28
BE466859A (fr) 1900-01-01
NL62477C (fr) 1900-01-01
US2307474A (en) 1943-01-05

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