FR3120153B1 - Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang - Google Patents

Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang Download PDF

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Publication number
FR3120153B1
FR3120153B1 FR2101677A FR2101677A FR3120153B1 FR 3120153 B1 FR3120153 B1 FR 3120153B1 FR 2101677 A FR2101677 A FR 2101677A FR 2101677 A FR2101677 A FR 2101677A FR 3120153 B1 FR3120153 B1 FR 3120153B1
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FR
France
Prior art keywords
memory
rank
minimize
size
hammering effect
Prior art date
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Active
Application number
FR2101677A
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English (en)
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FR3120153A1 (fr
Inventor
Fabrice Devaux
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Upmem SAS
Original Assignee
Upmem SAS
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Publication date
Application filed by Upmem SAS filed Critical Upmem SAS
Priority to FR2101677A priority Critical patent/FR3120153B1/fr
Priority to US18/277,961 priority patent/US20240233800A9/en
Priority to CN202280026421.4A priority patent/CN117121106A/zh
Priority to PCT/FR2022/050256 priority patent/WO2022175619A1/fr
Priority to KR1020237030067A priority patent/KR20230147646A/ko
Publication of FR3120153A1 publication Critical patent/FR3120153A1/fr
Application granted granted Critical
Publication of FR3120153B1 publication Critical patent/FR3120153B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Retry When Errors Occur (AREA)

Abstract

L’invention concerne un dispositif mémoire comprenant : - des circuits mémoire DRAM (100), dont la capacité totale est divisée en une première partie (102) et une deuxième partie (103) de taille supérieure à la première partie (102); - un circuit de contrôle configuré pour accéder aux circuits mémoire, le circuit de contrôle comprend: - un premier bloc (201) configuré pour exécuter un premier algorithme (201A) destiné à protéger la première partie (102) d’un effet de martelage de rang; - un deuxième bloc (202) configuré pour exécuter un deuxième algorithme (202A) destiné à protéger la deuxième partie (103) d’un effet de martelage de rang susceptible d’intervenir, le deuxième algorithme (202A) utilisant une table principale sauvegardée dans la première partie (102). Figure pour l’abrégé : f igur e 1
FR2101677A 2021-02-22 2021-02-22 Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang Active FR3120153B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2101677A FR3120153B1 (fr) 2021-02-22 2021-02-22 Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang
US18/277,961 US20240233800A9 (en) 2021-02-22 2022-02-11 Memory device provided with dram memory circuits arranged in such a way as to minimize the size of a memory block allowing management of the row-hammering
CN202280026421.4A CN117121106A (zh) 2021-02-22 2022-02-11 设置有按照使得最小化存储器块大小以允许管理行锤击效应的方式布置的dram存储器电路的存储器设备
PCT/FR2022/050256 WO2022175619A1 (fr) 2021-02-22 2022-02-11 Dispositif memoire pourvu de circuits memoire dram agences de maniere a minimiser la taille d'un bloc memoire permettant la gestion de l'effet de martelage de rang
KR1020237030067A KR20230147646A (ko) 2021-02-22 2022-02-11 행-해머링 효과를 관리할 수 있는 메모리 블록의 크기를 최소화하는 것과 같은 방식으로 배열된 dram 메모리 회로를 갖춘 메모리 디바이스

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2101677A FR3120153B1 (fr) 2021-02-22 2021-02-22 Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang
FR2101677 2021-02-22

Publications (2)

Publication Number Publication Date
FR3120153A1 FR3120153A1 (fr) 2022-08-26
FR3120153B1 true FR3120153B1 (fr) 2024-02-16

Family

ID=76601267

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2101677A Active FR3120153B1 (fr) 2021-02-22 2021-02-22 Dispositif mémoire pourvu de circuits mémoire DRAM agences de manière à minimiser la taille d’un bloc mémoire permettant la gestion de l’effet de martelage de rang

Country Status (5)

Country Link
US (1) US20240233800A9 (fr)
KR (1) KR20230147646A (fr)
CN (1) CN117121106A (fr)
FR (1) FR3120153B1 (fr)
WO (1) WO2022175619A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3066842B1 (fr) 2017-05-24 2019-11-08 Upmem Logique de correction de row hammer pour dram avec processeur integre
KR102687575B1 (ko) * 2019-01-03 2024-07-24 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
FR3111731B1 (fr) 2020-06-23 2023-01-06 Upmem Procédé et circuit de protection d’un dispositif de mémoire DRAM de l’effet de martelagede rang

Also Published As

Publication number Publication date
FR3120153A1 (fr) 2022-08-26
US20240233800A9 (en) 2024-07-11
US20240135981A1 (en) 2024-04-25
KR20230147646A (ko) 2023-10-23
CN117121106A (zh) 2023-11-24
WO2022175619A1 (fr) 2022-08-25

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