FR3116161B1 - Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille - Google Patents
Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille Download PDFInfo
- Publication number
- FR3116161B1 FR3116161B1 FR2011599A FR2011599A FR3116161B1 FR 3116161 B1 FR3116161 B1 FR 3116161B1 FR 2011599 A FR2011599 A FR 2011599A FR 2011599 A FR2011599 A FR 2011599A FR 3116161 B1 FR3116161 B1 FR 3116161B1
- Authority
- FR
- France
- Prior art keywords
- power transistor
- gate
- dut
- current
- monitoring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012544 monitoring process Methods 0.000 title 1
- 230000002159 abnormal effect Effects 0.000 abstract 2
- 238000010304 firing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Amplifiers (AREA)
- Protection Of Static Devices (AREA)
Abstract
L’invention se rapporte à un dispositif de protection de transistor de puissance (DUT), pouvant être connecté d’une part à une grille (G) d’un transistor de puissance (DUT), et d’autre part à un amplificateur de puissance (AP) configuré pour fournir un courant de grille (Ig) suffisant pour faire commuter le transistor de puissance (DUT), le dispositif comprenant au moins une résistance (Rg), et un détecteur (DET) comprenant un premier comparateur de tension (U4) configuré pour détecter une consommation anormale de courant de grille (Ig) après une séquence de commutation du transistor de puissance (DUT) lors de son amorçage, et comprenant un second comparateur de tension (U5) configuré pour détecter une génération anormale de courant de grille (Ig) pendant une séquence de conduction du transistor de puissance (DUT) dans son régime faiblement ohmique. Figure pour l’abrégé : Fig. 2
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2011599A FR3116161B1 (fr) | 2020-11-12 | 2020-11-12 | Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2011599 | 2020-11-12 | ||
FR2011599A FR3116161B1 (fr) | 2020-11-12 | 2020-11-12 | Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3116161A1 FR3116161A1 (fr) | 2022-05-13 |
FR3116161B1 true FR3116161B1 (fr) | 2024-02-02 |
Family
ID=74668961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2011599A Active FR3116161B1 (fr) | 2020-11-12 | 2020-11-12 | Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR3116161B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116990655B (zh) * | 2023-09-26 | 2023-12-19 | 安徽大学 | 一种基于漏-源电压变化率的晶体管短路检测电路和方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3931627B2 (ja) * | 2001-11-01 | 2007-06-20 | 株式会社日立製作所 | 半導体スイッチング素子のゲート駆動装置 |
JP4338721B2 (ja) * | 2006-08-22 | 2009-10-07 | 株式会社日立製作所 | 電力変換装置及びその異常検出方法 |
CN110431429B (zh) * | 2017-03-14 | 2022-02-22 | 日本电产株式会社 | 功率半导体开关元件的损伤预测装置和损伤预测方法、ac-dc转换器、dc-dc转换器 |
-
2020
- 2020-11-12 FR FR2011599A patent/FR3116161B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR3116161A1 (fr) | 2022-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10033285B1 (en) | Secondary controller for a flyback converter including a sense resistor fault detection | |
US20090160476A1 (en) | Failure detection device for power circuit including switching element | |
IT1264619B1 (it) | Metodo e dispositivo per la protezione da corto circuiti di dispositivi a transistore di potenza | |
US10250029B2 (en) | Device overvoltage detector | |
FR3116161B1 (fr) | Détecteur de court-circuit pour transistor de puissance par surveillance du courant de sa grille | |
JPH0269680A (ja) | 負荷の短絡検出回路装置 | |
US20170331369A1 (en) | Power conversion device and method of controlling the same | |
US20210058081A1 (en) | Protection of a field-effect transistor, which is operated in a switching mode, against an overload current | |
WO2002029949A3 (fr) | Dispositif a semi-conducteur avec fonctions protectrices | |
US6330143B1 (en) | Automatic over-current protection of transistors | |
US9645176B2 (en) | Device for measuring a chopped current | |
US10411689B2 (en) | Increase robustness of devices to overvoltage transients | |
FR3128995B1 (fr) | Détection et protection de court-circuit d’un composant à grille isolée par monitoring et contrôle de la tension de grille. | |
GB1293652A (en) | Pulse width modulated bridge power amplifier protection circuit | |
US10291221B2 (en) | Control device for a power semiconductor switch | |
JP2020505901A5 (fr) | ||
US4001648A (en) | Ground fault detector | |
JP6319456B2 (ja) | 漏電遮断器 | |
US11936285B2 (en) | Switch system comprising a current-limiting device | |
KR102633692B1 (ko) | 트랜지스터 과전류 보호 회로 | |
KR101659088B1 (ko) | Led 전원 장치 | |
US6043701A (en) | Circuit configuration for protecting a power MOSFET | |
FR3105430B1 (fr) | Dispositif de detection d'une defaillance dans un reseau electrique, reseau electrique ou equipement comprenant un tel dispositif et procede de detection d’une defaillance | |
CA3101845A1 (fr) | Procede et dispositif d'actionnement d'un transistor a effet de champ metal-oxyde semiconducteur | |
DE58907258D1 (de) | Schutzeinrichtung gegen Überspannungen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20220513 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |