FR3115175B1 - Dispositif d'acquisition d'une image de profondeur d'une scene - Google Patents
Dispositif d'acquisition d'une image de profondeur d'une scene Download PDFInfo
- Publication number
- FR3115175B1 FR3115175B1 FR2010310A FR2010310A FR3115175B1 FR 3115175 B1 FR3115175 B1 FR 3115175B1 FR 2010310 A FR2010310 A FR 2010310A FR 2010310 A FR2010310 A FR 2010310A FR 3115175 B1 FR3115175 B1 FR 3115175B1
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- FR
- France
- Prior art keywords
- sensor
- photosites
- durations
- scene
- acquiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000010363 phase shift Effects 0.000 abstract 2
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
- G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Optical Distance (AREA)
Abstract
DISPOSITIF D'ACQUISITION D'UNE IMAGE DE PROFONDEUR D'UNE SCENE La présente description concerne un dispositif (12) d'acquisition d'une image de profondeur d'une scène par détection d'un signal lumineux réfléchi. Le dispositif comprend un empilement d'un premier capteur (W1) et d'un deuxième capteur (W2). Le premier capteur comprend des premiers photosites de profondeur (P1) configurés pour acquérir au moins un premier échantillon de charges photogénérées pendant des premières durées. Le deuxième capteur comprend des deuxièmes photosites de profondeur (P2) disposés en regard des premiers photosites, les deuxièmes photosites étant configurés pour acquérir au moins un deuxième échantillon de charges photogénérées pendant des deuxièmes durées décalées par rapport aux premières durées d'un premier déphasage constant. Le premier capteur (W1) ou le deuxième capteur (W2) comprend en outre des troisièmes photosites (P1) configurés pour acquérir au moins un troisième échantillon pendant des troisièmes durées décalées par rapport aux premières durées d'un deuxième déphasage constant. Figure pour l'abrégé : Fig. 3
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2010310A FR3115175B1 (fr) | 2020-10-08 | 2020-10-08 | Dispositif d'acquisition d'une image de profondeur d'une scene |
US17/495,761 US20220113424A1 (en) | 2020-10-08 | 2021-10-06 | Device of acquisition of a depth image of a scene |
CN202111169934.4A CN114300492A (zh) | 2020-10-08 | 2021-10-08 | 采集场景的深度图像的设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2010310A FR3115175B1 (fr) | 2020-10-08 | 2020-10-08 | Dispositif d'acquisition d'une image de profondeur d'une scene |
FR2010310 | 2020-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3115175A1 FR3115175A1 (fr) | 2022-04-15 |
FR3115175B1 true FR3115175B1 (fr) | 2022-08-26 |
Family
ID=74553912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2010310A Active FR3115175B1 (fr) | 2020-10-08 | 2020-10-08 | Dispositif d'acquisition d'une image de profondeur d'une scene |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220113424A1 (fr) |
CN (1) | CN114300492A (fr) |
FR (1) | FR3115175B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023242112A1 (fr) * | 2022-06-15 | 2023-12-21 | Signify Holding B.V. | Poursuite d'objets à l'aide de signaux lumineux |
FR3138963A1 (fr) * | 2022-08-18 | 2024-02-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Double CTIA pour photodiode non pincée |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1221349A (en) | 1967-05-10 | 1971-02-03 | Armco Steel Corp | Metallic coating method |
FR2969384A1 (fr) * | 2010-12-21 | 2012-06-22 | St Microelectronics Sa | Capteur d'image a intermodulation reduite |
US8569700B2 (en) * | 2012-03-06 | 2013-10-29 | Omnivision Technologies, Inc. | Image sensor for two-dimensional and three-dimensional image capture |
US9508681B2 (en) * | 2014-12-22 | 2016-11-29 | Google Inc. | Stacked semiconductor chip RGBZ sensor |
FR3075462B1 (fr) * | 2017-12-19 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene |
-
2020
- 2020-10-08 FR FR2010310A patent/FR3115175B1/fr active Active
-
2021
- 2021-10-06 US US17/495,761 patent/US20220113424A1/en active Pending
- 2021-10-08 CN CN202111169934.4A patent/CN114300492A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3115175A1 (fr) | 2022-04-15 |
US20220113424A1 (en) | 2022-04-14 |
CN114300492A (zh) | 2022-04-08 |
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