FR3107904B1 - Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique - Google Patents

Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique Download PDF

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Publication number
FR3107904B1
FR3107904B1 FR2002213A FR2002213A FR3107904B1 FR 3107904 B1 FR3107904 B1 FR 3107904B1 FR 2002213 A FR2002213 A FR 2002213A FR 2002213 A FR2002213 A FR 2002213A FR 3107904 B1 FR3107904 B1 FR 3107904B1
Authority
FR
France
Prior art keywords
treating
accelerating cavity
ion implantation
cavity surface
technique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2002213A
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English (en)
Other versions
FR3107904A1 (fr
Inventor
Matthieu Cavellier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR2002213A priority Critical patent/FR3107904B1/fr
Priority to PCT/EP2021/053014 priority patent/WO2021175539A1/fr
Priority to CA3174597A priority patent/CA3174597A1/fr
Priority to JP2022553633A priority patent/JP2023516769A/ja
Priority to US17/909,068 priority patent/US20230040854A1/en
Publication of FR3107904A1 publication Critical patent/FR3107904A1/fr
Application granted granted Critical
Publication of FR3107904B1 publication Critical patent/FR3107904B1/fr
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H01J2237/162—Open vessel, i.e. one end sealed by object or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H05H7/20—Cavities; Resonators with superconductive walls

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)

Abstract

Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique L’invention se rapporte à une technique de traitement de surface d’une ou plusieurs cavité(s) accélératrice(s) (C) d’un module accélérateur (M). Cette technique repose sur l’utilisation d’un faisceau de particules pour opérer un balayage au moins partiel de la surface interne (S) de la ou des cavités accélératrices. Une telle technique offre une solution de traitement plus adaptée aux cavités accélératrices, avec une meilleure maîtrise des paramètres d’implantation. Figure d’abrégé : Figure 1
FR2002213A 2020-03-05 2020-03-05 Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique Active FR3107904B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2002213A FR3107904B1 (fr) 2020-03-05 2020-03-05 Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique
PCT/EP2021/053014 WO2021175539A1 (fr) 2020-03-05 2021-02-09 Procédé et dispositif de traitement d'une surface de cavité accélératrice par implantation ionique
CA3174597A CA3174597A1 (fr) 2020-03-05 2021-02-09 Procede et dispositif de traitement d'une surface de cavite acceleratrice par implantation ionique
JP2022553633A JP2023516769A (ja) 2020-03-05 2021-02-09 イオン注入によって加速キャビティの表面を処理するための方法及び装置
US17/909,068 US20230040854A1 (en) 2020-03-05 2021-02-09 Method and device for treating a surface of an accelerating cavity by ion implantation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2002213 2020-03-05
FR2002213A FR3107904B1 (fr) 2020-03-05 2020-03-05 Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique

Publications (2)

Publication Number Publication Date
FR3107904A1 FR3107904A1 (fr) 2021-09-10
FR3107904B1 true FR3107904B1 (fr) 2022-11-11

Family

ID=71784150

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2002213A Active FR3107904B1 (fr) 2020-03-05 2020-03-05 Procédé et dispositif de traitement d’une surface de cavité accélératrice par implantation ionique

Country Status (5)

Country Link
US (1) US20230040854A1 (fr)
JP (1) JP2023516769A (fr)
CA (1) CA3174597A1 (fr)
FR (1) FR3107904B1 (fr)
WO (1) WO2021175539A1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2732040B1 (fr) * 1995-03-21 1997-04-25 Commissariat Energie Atomique Dispositif a microtete photo-ionique pour le traitement d'une surface de materiau par depot de poudre
US7151347B1 (en) * 2005-06-28 2006-12-19 Jefferson Science Associates Llc Passivated niobium cavities
JP5378185B2 (ja) * 2009-12-08 2013-12-25 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及び集束イオンビーム加工方法
US8903464B1 (en) * 2010-10-23 2014-12-02 Jefferson Science Associates, Llc Apparatus and process for passivating an SRF cavity
US8812068B1 (en) * 2011-10-20 2014-08-19 Jefferson Science Associates, LLC. Method of nitriding niobium to form a superconducting surface
US10147823B2 (en) * 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
FR3085607B1 (fr) * 2019-05-21 2021-01-08 Techmeta Eng Sas Appareil à souder par faisceau d'électrons

Also Published As

Publication number Publication date
JP2023516769A (ja) 2023-04-20
FR3107904A1 (fr) 2021-09-10
US20230040854A1 (en) 2023-02-09
CA3174597A1 (fr) 2021-09-10
WO2021175539A1 (fr) 2021-09-10

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